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PDF HFA30TA60CSPBF Data sheet ( Hoja de datos )
| Número de pieza | HFA30TA60CSPBF | |
| Descripción | Soft Recovery Diode | |
| Fabricantes | International Rectifier | |
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HFA30TA60CSPbF
Vishay HighwPwow.wDaetarShPereot4dU.cuocmts
HEXFRED®
Ultrafast Soft Recovery Diode, 2 x 15 A
Base
common
cathode
2
2
1 Common 3
Anode cathode Anode
D2PAK
PRODUCT SUMMARY
VR
VF at 15 A at 25 °C
IF(AV)
trr (typical)
TJ (maximum)
Qrr (typical)
dI(rec)M/dt (typical) at 125 °C
IRRM (typical)
600 V
1.7 V
2 x 15 A
19 ns
150 °C
80 nC
160 A/µs
4.0 A
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low IRRM
• Very low Qrr
• Specified at operating conditions
• Lead (Pb)-free
• Designed and qualified for Q101 level
Available
RoHS*
COMPLIANT
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA30TA60CS is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial construction
and advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 15 A per leg continuous
current, the HFA30TA60CS is especially well suited for use
as the companion diode for IGBTs and MOSFETs. In
addition to ultrafast recovery time, the HEXFRED® product
line features extremely low values of peak recovery current
(IRRM) and does not exhibit any tendency to “snap-off” during
the tb portion of recovery. The HEXFRED features combine
to offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA30TA60CS is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
per leg
per device
Single pulse forward current
Maximum repetitive forward current
SYMBOL
VR
IF
IFSM
IFRM
Maximum power dissipation
PD
Operating junction and storage temperature range
TJ, TStg
TEST CONDITIONS
TC = 100 °C
TC = 25 °C
TC = 100 °C
VALUES
600
15
30
150
60
74
29
- 55 to + 150
UNITS
V
A
°C
W
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94071
Revision: 22-Oct-08
For technical questions, contact: [email protected]
www.vishay.com
1
1 page  
HFA30TA60CSPbF
HEXFRED®
Vishay High wPwoww.DaetarShPereot4dU.ucocmts
Ultrafast Soft Recovery Diode, 2 x 15 A
VR = 200 V
L = 70 µH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
(1) dIF/dt
0.75 IRRM
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Dimensions
Part marking information
Packaging information
LINKS TO RELATED DOCUMENTS
http://www.vishay.com/doc?95046
http://www.vishay.com/doc?95054
http://www.vishay.com/doc?95032
Document Number: 94071
Revision: 22-Oct-08
For technical questions, contact: [email protected]
www.vishay.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HFA30TA60CSPBF.PDF ] | |
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