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PDF APTGT50TDU170PG Data sheet ( Hoja de datos )

Número de pieza APTGT50TDU170PG
Descripción Triple Dual Common Source Trench Field Stop IGBT Power Module
Fabricantes Microsemi Corporation 
Logotipo Microsemi Corporation Logotipo



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Triple Dual Common Source
Trench + Field Stop IGBT®
Power Module
C1
G1
C3
G3
C5
G5
E1 E3
E1/E2
E2 E4
E3/E4
E5
E6
E5/E6
G2
C2
G4
C4
G6
C6
C1 C3
C5
G1 G3 G5
E1/E2 E1 E3/E4 E3 E5/E6 E5
E2 E4 E6
G2 G4 G6
C2 C 4 C 6
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
VCES = 1700V
IC = 50A @ Tc = 80°C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
High level of integration
Kelvin emitter for easy drive
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Very low (12mm) profile
Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
RoHS Compliant
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1700
70
50
100
±20
310
100A @ 1600V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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APTGT50TDU170PG pdf
APTGT50TDU170PGwww.DataSheet4U.com
Operating Frequency vs Collector Current
30
25
20 ZVS
15
ZCS
VCE=900V
D=50%
RG=10
TJ=125°C
TC=75°C
10
5 hard
switching
0
0 10 20 30 40 50 60 70 80
IC (A)
100
90
80
70
60
50
40
30
20
10
0
0
Forward Characteristic of diode
TJ =25°C
TJ= 125°C
TJ=125°C
0.5 1 1.5 2 2.5
VF (V)
3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.8
0.7 0.9
Diode
0.6
0.5 0.7
0.4 0.5
0.3 0.3
0.2
0.1 0.1
0 0.05
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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