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PDF APTGT50DH60T1G Data sheet ( Hoja de datos )
| Número de pieza | APTGT50DH60T1G | |
| Descripción | Asymmetrical - Bridge Trench Field Stop IGBT Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APTGT50DH60T1Gwww.DataSheet4U.com
Asymmetrical - Bridge
Trench + Field Stop IGBT
Power Module
VCES = 600V
IC = 50A* @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Pins 3/4 must be shorted together
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
TJ = 150°C
Max ratings
600
80*
50*
100
±20
176
100A @ 550V
Unit
V
A
V
W
* Specification of IGBT device but output current must be limited to 40A to not exceed a delta of temperature greater
than 35°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–5
1 page  
APTGT50DH60T1Gwww.DataSheet4U.com
Operating Frequency vs Collector Current
120
VCE=300V
100 D=50%
80 ZVS
RG=8.2Ω
TJ=150°C
ZCS
Tc=85°C
60
40
20 Hard
switching
0
0 20
40
IC (A)
60
80
Forward Characteristic of diode
100
80
60
40
20
0
0
TJ=125°C
TJ=150°C
TJ=25°C
0.4 0.8 1.2 1.6
VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.6
1.4 0.9
Diode
1.2
0.7
1
0.8 0.5
0.6 0.3
0.4
0.2
0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
1
Rectangular Pulse Duration in Seconds
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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| PDF Descargar | [ Datasheet APTGT50DH60T1G.PDF ] | |
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