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Número de pieza | APTGT75TA120PG | |
Descripción | Triple phase leg Fast Trench Field Stop IGBT Power Module | |
Fabricantes | Microsemi Corporation | |
Logotipo | ||
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Triple phase leg
Fast Trench + Field Stop IGBT®
Power Module
VBUS1
G1
VBUS2
G3
VBUS3
G5
VCES = 1200V
IC = 75A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
E1
G2
E2
0/VBUS1
E3
U
G4
E4
0/VBUS2
E5
V
G6
E6
0/VBUS3
Features
W • Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
VBUS 1
VBUS 2
VBUS 3
G1 G3 G5
0/VBUS 1 E1 0/VBUS 2 E3 0/VBUS 3 E5
E2 E4 E6
G2 G4 G6
U VW
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
• Module can be configured as a three phase bridge
• Module can be configured as a boost followed by a
full bridge
• RoHS Compliant
Max ratings
Unit
1200
V
TC = 25°C
TC = 80°C
TC = 25°C
100
75
175
±20
A
V
TC = 25°C
350
W
Tj = 125°C 150A@1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page APTGT75TA120PGwww.DataSheet4U.com
Operating Frequency vs Collector Current
60
50
40
30 ZCS ZVS
VCE=600V
D=50%
RG=4.7Ω
TJ =125°C
Tc=75°C
20
10 Hard
switching
0
0 20
40
60 80
IC (A)
100 120
Forward Characteristic of diode
150
125 TJ=25°C
100
75 TJ=125°C
50
25 TJ=125°C
0
0 0.4 0.8 1.2 1.6 2 2.4
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.6
0.9
0.5
0.7
0.4
Diode
0.3 0.5
0.2 0.3
0.1 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet APTGT75TA120PG.PDF ] |
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