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PDF SKD75GAL123D Data sheet ( Hoja de datos )
| Número de pieza | SKD75GAL123D | |
| Descripción | Igbt Modules | |
| Fabricantes | Semikron | |
| Logotipo |  |
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Absolute Maximum Ratings
Symbol Conditions 1)
VCES
VCGR
IC
ICM
VGES
Ptot
Tj, (Tstg)
Visol
humidity
climate
Diodes 9)
IF
IFM= – ICM
IFSM
I2t
RGE = 20 kΩ
Tcase = 25/80 °C
Tcase = 25/80 °C; tp = 1 ms
per IGBT/D1/D8, Tcase=25 °C
AC, 1 min.
DIN 40 040
DIN IEC 68 T.1
Tcase = 80 °C
Tcase = 80 °C; tp = 1 ms
tp = 10 ms; sin.; Tj = 150 °C
tp = 10 ms; Tj = 150 °C
Values
1200
1200
75 / 45
140 / 90
± 20
350 / 125 / 125
– 40 . . .+150 (125)
2 500
Class F
55/150/56
D1-6
9)
600
1800
D7
15
30
200
200
D8
30
60
350
600
SEMITRANS® M
Unitswww.IDGaBtTaSMheoedtu4lUe.scom
V SKD 75 GAL 123 D
V Input bridge B6U with
A brake chopper
A Preliminary Data
V
W
°C
V
A
A
A
A2s
7D-Pack = 7 Diodes Pack
Characteristics
Symbol Conditions 1)
V(BR)CES
VGE(th)
ICES
IGES
VCEsat
VCEsat
gfs
VGE = 0, IC = 1 mA
VGE = VCE, IC = 2 mA
VGE = 0
VCE = VCES
Tj
Tj
=
=
25
125
°C
°C
VGE = 20 V, VCE = 0
IC
IC
=
=
50
75
A
A
VGE = 15 V;
Tj = 25 (125)
°C
VCE = 20 V, IC = 25 A
CCHC
Cies
Coes
Cres
per IGBT
VGE = 0
VCE = 25 V
f = 1 MHz
td(on)
tr
td(off)
tf
Eon
Eoff
VCC = 600 V
VGE = + 15 V / - 15 V 3)
IC = 50 A, ind. load
RGon = RGoff = 22 Ω
Tj = 125 °C
Inverse Diode D78) of brake chopper
VF = VEC
VF = VEC
VTO
rT
IRRM
Qrr
IF
IF
=
=
15
25
A
A
VGE = 0 V;
Tj = 25 (125)
°C
Tj = 125 °C
Tj = 125 °C
IF = 15 A; Tj = 25 (125) °C2)
IF = 15 A; Tj = 25 (125) °C2)
FWD D8 of "GAL" brake chopper 8)
VF = VEC
VF = VEC
VTO
rT
IRRM
Qrr
IF
IF
=
=
25
40
A
A
VGE = 0 V;
Tj = 25 (125)
°C
Tj = 125 °C
Tj = 125 °C
IF = 25 A; Tj = 25 (125) °C2)
IF = 25 A; Tj = 25 (125) °C2)
Thermal Characteristics
Rthjc per IGBT / diode D1..6 9)
Rthjc per diode D7 / D8
Rthch
per module
min.
≥ VCES
4,5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
typ.
–
5,5
0,8
3,5
–
2,5(3,1)
3(3,8)
40
–
3300
500
220
44
56
380
70
8
5
max.
–
6,5
1
–
200
3(3,7)
–
–
350
4300
650
300
100
100
500
100
–
–
– 2,0(1,8) 2,5
– 2,3(2,1) –
– 1,1 1,2
– 45 70
– 12(16) –
– 1(2,7) –
– 2,0 (1,8) 2,5
– 2,3 (2,1) –
– – 1,2
– 25 44
– 19(25) –
– 1,5(4,5) –
– – 0,35 / 1,0
– – 1,5 / 1,0
– – 0,05
Units
V
V
mA
mA
nA
V
V
S
pF
pF
pF
pF
ns
ns
ns
ns
mWs
mWs
V
V
V
mΩ
A
µC
V
V
V
mΩ
A
µC
°C/W
°C/W
°C/W
SKD 75 GAL
Features
• Round main terminals (2 mm∅)
• Easy drilling of PCB
• Input diodes glass passivated
• 1400 V PIV, good for 500 VAC
• High I2t rating (inrush current)
• IGBT is latch-up free, homoge-
neous silicon-structure
• High short circuit capability,
self limiting to 6 * Icnom
• Fast & soft CAL diodes8)
• Isolated copper baseplate
using DCB Direct Copper Bon-
ding Technology
• Large clearance (9 mm) and
creepage distances (13 mm).
Typical Applications:
Input rectifier bridge (B6U) with
brake chopper for PWM inverter
drives using SEMITRANS
SKM 75GD123D
1) Tcase = 25 °C, unless otherwise
specified
2) IF = – IC, VR = 600 V,
– diF/dt = 500 A/µs, VGE = 0 V
3) Use VGEoff = -5 ... - 15 V
8) CAL = Controlled Axial Lifetime
Technology.
9) Data D1 - D6, case and
mech. data → B6 - 130
© by SEMIKRON
0996
B 6 – 125
1 page  
www.DataSheet4U.com
© by SEMIKRON
0796
B 6 – 129
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SKD75GAL123D.PDF ] | |
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