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PDF APTGF90DH60TG Data sheet ( Hoja de datos )
| Número de pieza | APTGF90DH60TG | |
| Descripción | Asymmetrical - Bridge NPT IGBT Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APTGF90DH60TGwww.DataSheet4U.com
Asymmetrical - Bridge
NPT IGBT Power Module
VCES = 600V
IC = 90A @ Tc = 80°C
Application
VBUS
VBUS SENSE
• Welding converters
• Switched Mode Power Supplies
Q1 • Switched Reluctance Motor Drives
G1 CR3
E1
OUT1 O UT2
CR2
0/VBUS SENSE
NTC1
0/V BU S
Q4
G4
E4
NT C2
VBUS
SENSE
VBUS
E1
G1
G4
E4
0/ VBUS
0/ VBUS
SENSE
OUT2
OUT1
NTC2
NTC1
Features
• Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Tc = 25°C
Tc = 80°C
Tc = 25°C
Tc = 25°C
Tj = 150°C
Max ratings
600
110
90
315
±20
416
200A @ 600V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-6
1 page  
Turn-On Delay Time vs Collector Current
35
VGE = 15V
30
25
20
Tj = 25°C
VCE = 400V
RG = 5Ω
15
25 50 75 100 125
ICE, Collector to Emitter Current (A)
150
Current Rise Time vs Collector Current
80
VCE = 400V
60 RG = 5Ω
VGE=15V,
T J=1 25 °C
40
20
0
25 50 75 100 125 150
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
8
VCE = 400V
6 RG = 5Ω
4
TJ=125°C,
VGE=15V
2
T J=25°C,
VGE=15V
0
0 25 50 75 100 125 150
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
16
VCE = 400V
VGE = 15V
12 TJ= 125°C
Eon, 180A
Eoff, 180A
Eoff, 90A
8 Eon, 90A
Eoff, 45A
4
Eon, 45A
0
0 10 20 30 40 50
Gate Resistance (Ohms)
APTGF90DH60TGwww.DataSheet4U.com
Turn-Off Delay Time vs Collector Current
250
200
VGE=15V,
TJ=125°C
150
100
50
25
VCE = 400V
RG = 5Ω
50
75
VGE=15V,
TJ=25°C
100 125 150
ICE, Collector to Emitter Current (A)
Current Fall Time vs Collector Current
80
VCE = 400V, VGE = 15V, RG = 5Ω
60
TJ = 125°C
40
20 TJ = 25°C
0
25 50 75 100 125
ICE, Collector to Emitter Current (A)
150
Turn-Off Energy Loss vs Collector Current
6
5
VCE = 400V
VGE = 15V
4 RG = 5Ω
TJ = 125°C
3 TJ= 25°C
2
1
0
0 25 50 75 100 125 150
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Junction Temp.
10
VCE = 400V
VGE = 15V
8 RG = 5Ω
Eon, 180A
6 Eoff, 180A
4 Eon, 90A
2 Eoff, 45A
Eoff, 90A
Eon, 45A
0
0 25 50 75 100 125
TJ, Junction Temperature (°C)
www.microsemi.com
5-6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APTGF90DH60TG.PDF ] | |
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