|
|
PDF APTGF75H120TG Data sheet ( Hoja de datos )
| Número de pieza | APTGF75H120TG | |
| Descripción | Full - Bridge NPT IGBT Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de APTGF75H120TG (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
APTGF75H120TGwww.DataSheet4U.com
Full - Bridge
NPT IGBT Power Module
VCES = 1200V
IC = 75A @ Tc = 80°C
G1
E1
G2
E2
NT C1
VBUS
Q1 Q3
OUT1 OUT2
Q2 Q4
0/VBUS
G3
E3
G4
E4
NT C2
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
G3
E3
VBUS
E1
G1
G4
E4
0/VBUS
E2
G2
OUT2
OUT1
NTC2
NTC1
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS compliant
Tc = 25°C
Tc = 80°C
Tc = 25°C
Tc = 25°C
Tj = 150°C
Max ratings
1200
100
75
150
±20
500
150A @ 1200V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page  
APTGF75H120TGwww.DataSheet4U.com
Operating Frequency vs Collector Current
100
90 VCE=600V
80
D= 50%
RG=7.5 Ω
70 TJ=125°C
60
ZCS
ZVS
TC=75°C
50
40
30
20 hard
10 switching
0
0 20 40 60 80 100
IC (A)
Forward Characteristic of diode
125
100
75
TJ=125°C
50
25 TJ=25°C
0
0 0.5 1 1.5 2 2.5 3
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.7
0.6 0.9
Diode
0.5 0.7
0.4
0.5
0.3
0.3
0.2
0.1
0.1 0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
1
rectangular Pulse Duration (Seconds)
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet APTGF75H120TG.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| APTGF75H120TG | Full - Bridge NPT IGBT Power Module | Microsemi Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |