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PDF APTGF75DDA120TG Data sheet ( Hoja de datos )
| Número de pieza | APTGF75DDA120TG | |
| Descripción | Dual Boost Chopper NPT IGBT Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APTGF75DDA120TGwww.DataSheet4U.com
Dual Boost Chopper
NPT IGBT Power Module
VCES = 1200V
IC = 75A @ Tc = 80°C
VBUS
SENSE1
VBUS
VBUS
SENSE2
G4
E4
0/VBUS
E2
G2
OUT2
OUT1
NTC2
NTC1
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power factor correction
Features
• Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS compliant
Tc = 25°C
Tc = 80°C
Tc = 25°C
Tc = 25°C
Tj = 150°C
Max ratings
1200
100
75
150
±20
500
150A @ 1200V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page  
APTGF75DDA120TGwww.DataSheet4U.com
Operating Frequency vs Collector Current
100
90 VCE=600V
80
70
D=50%
RG=7.5 Ω
ZVS TJ=125°C
60 TC=75°C
50 ZCS
40
30 hard
20 switching
10
0
0 20 40 60 80 100
IC (A)
Forward Characteristic of diode
250
200
150
TJ=125°C
100
50 TJ=25°C
0
0 0.5 1 1.5 2 2.5 3
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.7
Diode
0.6 0.9
0.5 0.7
0.4
0.5
0.3
0.3
0.2
0.1
0.1 0.05
0
0.00001
0.0001
0.001
Single Pulse
0.01
0.1
1
rectangular Pulse Duration (Seconds)
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet APTGF75DDA120TG.PDF ] | |
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