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PDF APTGF50DH60TG Data sheet ( Hoja de datos )
| Número de pieza | APTGF50DH60TG | |
| Descripción | Asymmetrical - Bridge NPT IGBT Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APTGF50DH60TGwww.DataSheet4U.com
Asymmetrical - Bridge
NPT IGBT Power Module
VCES = 600V
IC = 50A @ Tc = 80°C
Q1
G1
VBUS
VBUS SENSE
CR3
E1
OUT1 O UT2
CR2
0/VBUS SENSE
NTC1
0/V BU S
Q4
G4
E4
NT C2
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
VBUS
SENSE
VBUS
E1
G1
G4
E4
0/ VBUS
0/ VBUS
SENSE
OUT2
OUT1
NTC2
NTC1
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS compliant
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
600
65
50
230
±20
250
100A@500V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-6
1 page  
Turn-On Delay Time vs Collector Current
60
50 VGE = 15V
40
Tj = 125°C
30
VCE = 400V
RG = 2.7Ω
20
0
25 50 75 100 125
ICE, Collector to Emitter Current (A)
150
Current Rise Time vs Collector Current
60
50
VCE = 400V
RG = 2.7Ω
40
30 VGE=15V,
20 TJ=125°C
10
0
0 25 50 75 100 125 150
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
2
VCE = 400V
1.5 RG = 2.7Ω
TJ=125°C,
VGE=15V
1
0.5
0
0 25 50 75 100 125 150
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
3
VCE = 400V
2.5 VGE = 15V
TJ= 125°C
2
Eon, 50A
1.5
Eoff, 50A
1
0.5
0
0
Eon, 50A
5 10 15 20
Gate Resistance (Ohms)
25
APTGF50DH60TGwww.DataSheet4U.com
Turn-Off Delay Time vs Collector Current
200
175
150
VGE=15V,
125 TJ=125°C
100
75
50
0
VCE = 400V
RG = 2.7Ω
VGE=15V,
TJ =25°C
25 50 75 100 125 150
ICE, Collector to Emitter Current (A)
Current Fall Time vs Collector Current
60
50 VCE = 400V, VGE = 15V, RG = 2.7Ω
40
30 TJ = 125°C
20
TJ = 25°C
10
0
0 25 50 75 100 125
ICE, Collector to Emitter Current (A)
150
Turn-Off Energy Loss vs Collector Current
2.5
VCE = 400V
2 VGE = 15V
RG = 2.7Ω
TJ = 125°C
1.5
1
0.5
0
0 25 50 75 100 125 150
ICE, Collector to Emitter Current (A)
Reverse Bias Safe Operating Area
120
100
80
60
40
20
0
0 200 400 600
VCE, Collector to Emitter Voltage (V)
www.microsemi.com
5-6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APTGF50DH60TG.PDF ] | |
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