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PDF APTGF50DH120TG Data sheet ( Hoja de datos )
| Número de pieza | APTGF50DH120TG | |
| Descripción | Asymmetrical - Bridge NPT IGBT Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APTGF50DH120TGwww.DataSheet4U.com
Asymmetrical - Bridge
NPT IGBT Power Module
VCES = 1200V
IC = 50A @ Tc = 80°C
Q1
G1
VBUS
VBUS SENSE
CR3
E1
OUT1 OUT2
CR2
0/VBUS SENSE
NT C1
0/ V BU S
Q4
G4
E4
NT C2
Application
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives
Features
• Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
VBUS
SENSE
VBUS
E1
G1
G4
E4
0/VBUS
0/VBUS
SENSE
OUT2
OUT1
NTC2
NTC1
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS compliant
Tc = 25°C
Tc = 80°C
Tc = 25°C
Tc = 25°C
Tj = 150°C
Max ratings
1200
75
50
150
±20
312
100A @ 1200V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-6
1 page  
Turn-On Delay Time vs Collector Current
45
VCE = 600V
40 RG = 5Ω
VGE = 15V
35
30
25
0
25 50 75 100
ICE, Collector to Emitter Current (A)
125
Current Rise Time vs Collector Current
180
140
VCE = 600V
RG = 5Ω
100
60 VGE=15V
20
0
25 50 75 100 125
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
28
24
VCE = 600V
RG = 5Ω
TJ=125°C,
VGE=15V
20
16
12
TJ=25°C,
8 VGE=15V
4
0
0 25 50 75 100 125
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
18
16
VCE = 600V
VGE = 15V
14 TJ= 125°C
12
10 Eon, 50A
8
Eoff, 50A
6 Eon, 25A
4
2 Eoff, 25A
0
0 10 20 30 40 50
Gate Resistance (Ohms)
APTGF50DH120TGwww.DataSheet4U.com
Turn-Off Delay Time vs Collector Current
400
350
VGE=15V,
TJ=125°C
300
250
200
VCE = 600V
RG = 5Ω
VGE=15V,
TJ=25°C
0 25 50 75 100
ICE, Collector to Emitter Current (A)
125
Current Fall Time vs Collector Current
50
40 TJ = 125°C
30
20
0
TJ = 25°C
VCE = 600V, VGE = 15V, RG = 5Ω
25 50 75 100 125
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
8
VCE = 600V
VGE = 15V
6 RG = 5Ω
TJ = 125°C
4
TJ = 25°C
2
0
0 25 50 75 100 125
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Junction Temp.
8
VCE = 600V
Eon, 50A
VGE = 15V
6 RG = 5Ω
4
Eoff, 50A
2
Eon, 25A
Eoff, 25A
0
0 25 50 75 100 125
TJ, Junction Temperature (°C)
www.microsemi.com
5-6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APTGF50DH120TG.PDF ] | |
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