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PDF APTGF30X60T3G Data sheet ( Hoja de datos )
| Número de pieza | APTGF30X60T3G | |
| Descripción | 3 Phase bridge NPT IGBT Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APTGF30X60T3G
3 Phase bridge
NPT IGBT Power Module
VCES = 600V
IC = 30A @ Tc = 80°C
15 31
16
19 23 29 14
20 25 30
18 22 28 R1
11 8 4
10 7 3
13
12 2
It is recommended to connect a decoupling capacitor
between pins 31 & 2 to reduce switching overvoltages, if DC
Power is connected between pins 15, 16 & 12.
Pins 15 & 16 must be shorted together.
Application
• Motor control
Features
• Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• RoHS compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
600
42
30
100
±20
140
60A@500V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-6
1 page  
Turn-On Delay Time vs Collector Current
50
40
VGE = 15V
30
20
10
0
Tj = 125°C
VCE = 400V
RG = 6.8Ω
10 20 30 40 50 60
ICE, Collector to Emitter Current (A)
70
Current Rise Time vs Collector Current
50
VCE = 400V
40 RG = 6.8Ω
30
20 VGE=15V,
TJ=125°C
10
0
0 10 20 30 40 50 60 70
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
1
0.75
VCE = 400V
RG = 6.8Ω
TJ=125°C,
VGE=15V
0.5
0.25
0
0 10 20 30 40 50 60 70
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
1
0.75
Eoff, 30A
0.5 Eon, 30A
0.25
0
0
VCE = 400V
VGE = 15V
TJ= 125°C
5 10 15 20
Gate Resistance (Ohms)
25
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APTGF30X60T3G
Turn-Off Delay Time vs Collector Current
125
100
75
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
50
25
0
VCE = 400V
RG = 6.8Ω
10 20 30 40 50 60
ICE, Collector to Emitter Current (A)
70
Current Fall Time vs Collector Current
50
40
30
20
10
0
0
TJ = 125°C
TJ = 25°C
VCE = 400V, VGE = 15V, RG = 6.8Ω
10 20 30 40 50 60
ICE, Collector to Emitter Current (A)
70
Turn-Off Energy Loss vs Collector Current
2
VCE = 400V
VGE = 15V
1.5 RG = 6.8Ω
TJ = 125°C
1
0.5
0
0 10 20 30 40 50 60 70
ICE, Collector to Emitter Current (A)
Reverse Bias Safe Operating Area
70
60
50
40
30
20
10
0
0 100 200 300 400 500 600
VCE, Collector to Emitter Voltage (V)
www.microsemi.com
5-6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APTGF30X60T3G.PDF ] | |
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