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PDF APTGF180DH60G Data sheet ( Hoja de datos )
| Número de pieza | APTGF180DH60G | |
| Descripción | Asymmetrical - bridge NPT IGBT Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APTGF180DH60Gwww.DataSheet4U.com
Asymmetrical - bridge
NPT IGBT Power Module
VCES = 600V
IC = 180A @ Tc = 80°C
Q1
G1
VBUS
CR3
E1 OUT1 OUT2
CR2
Q4
0/VBUS
G4
E4
OUT 1
Application
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives
Features
• Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
G1 VBUS
E1
0/VBUS
O UT2
Benefits
• Outstanding performance at high frequency
operation
E4 • Stable temperature behavior
G4 • Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
Tc = 25°C
Tc = 80°C
ICM Pulsed Collector Current
Tc = 25°C
VGE Gate – Emitter Voltage
PD Maximum Power Dissipation
Tc = 25°C
600
220
180
630
±20
833
V
A
V
W
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C 400A @ 600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-6
1 page  
Turn-On Delay Time vs Collector Current
35
30
VGE = 15V
25
Tj = 25°C
20 VCE = 400V
RG = 2.5Ω
15
50
100 150 200 250
ICE, Collector to Emitter Current (A)
300
Current Rise Time vs Collector Current
80
VCE = 400V
RG = 2.5Ω
60
VGE=15V,
40 TJ=125°C
20
0
50 100 150 200 250 300
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
16
VCE = 400V
12 RG = 2.5Ω
T J=1 25°C,
VGE=15V
8 TJ=25°C,
VGE=15V
4
0
50 100 150 200 250 300
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
32
VCE = 400V
Eon, 360A
VGE = 15V
24 TJ= 125°C
Eoff, 360A
Eoff, 180A
16 Eon, 180A
Eoff, 90A
8
Eon, 90A
0
0 5 10 15 20 25
Gate Resistance (Ohms)
APTGF180DH60Gwww.DataSheet4U.com
Turn-Off Delay Time vs Collector Current
250
200
VGE=15V,
TJ=125°C
150
100
50
50
VCE = 400V
RG = 2.5Ω
100
150
VGE=15V,
TJ=25°C
200 250
300
ICE, Collector to Emitter Current (A)
Current Fall Time vs Collector Current
80
VCE = 400V, VGE = 15V, RG = 2.5Ω
60
TJ = 125°C
40
20
TJ = 25°C
0
50 100 150 200 250
ICE, Collector to Emitter Current (A)
300
Turn-Off Energy Loss vs Collector Current
12
VCE = 400V
10 VGE = 15V
RG = 2.5Ω
8
TJ = 125°C
6 TJ = 25°C
4
2
0
50 100 150 200 250 300
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Junction Temp.
20
VCE = 400V
VGE = 15V
16 RG = 2.5Ω
Eon, 360A
12 Eoff, 360A
8 Eon, 180A
Eoff, 180A
4
Eoff, 90A
Eon, 90A
0
0 25 50 75 100 125
TJ, Junction Temperature (°C)
www.microsemi.com
5-6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APTGF180DH60G.PDF ] | |
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