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PDF APTGF100A120TG Data sheet ( Hoja de datos )
| Número de pieza | APTGF100A120TG | |
| Descripción | Phase leg NPT IGBT Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APTGF100A120TGwww.DataSheet4U.com
Phase leg
NPT IGBT Power Module
VCES = 1200V
IC = 100A @ Tc = 80°C
VBUS
NTC2
Q1
G1
E1
Q2
G2
E2
OUT
0/VBU S
NTC1
VBUS
E1
G1
G2
E2
0/VBUS
E2
G2
OUT
OUT
NTC2
NTC1
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS compliant
Tc = 25°C
Tc = 80°C
Tc = 25°C
Tc = 25°C
Tj = 150°C
Max ratings
1200
135
100
300
±20
568
200A @ 1200V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-6
1 page  
Turn-On Delay Time vs Collector Current
45
VCE = 600V
40 RG = 2.5Ω
VGE = 15V
35
30
25
0
50 100 150 200
ICE, Collector to Emitter Current (A)
250
Current Rise Time vs Collector Current
180
VCE = 600V
140 RG = 2.5Ω
100
60 VGE=15V
20
0
50 100 150 200 250
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
56
48
VCE = 600V
RG = 2.5Ω
TJ=125°C,
VGE=15V
40
32
24
TJ=25°C,
16 VGE=15V
8
0
0 50 100 150 200 250
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
36
32
VCE = 600V
VGE = 15V
Eon, 100A
28 TJ= 125°C
24
20 Eoff, 100A
16
12 Eon, 50A
8
4 Eoff, 50A
0
0 5 10 15 20 25
Gate Resistance (Ohms)
APTGF100A120TGwww.DataSheet4U.com
Turn-Off Delay Time vs Collector Current
400
350
VGE=15V,
TJ=125°C
300
250
200
VCE = 600V
RG = 2.5Ω
VGE=15V,
TJ=25°C
0 50 100 150 200
ICE, Collector to Emitter Current (A)
250
Current Fall Time vs Collector Current
50
TJ = 125°C
40
30
20
0
TJ = 25°C
VCE = 600V, VGE = 15V, RG = 2.5Ω
50 100 150 200 250
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
16
VCE = 600V
VGE = 15V
12 RG = 2.5Ω
TJ = 125°C
8
TJ = 25°C
4
0
0 50 100 150 200 250
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Junction Temp.
16
VCE = 600V
Eon, 100A
VGE = 15V
12 RG = 2.5Ω
8
Eoff, 100A
4
Eon, 50A
Eoff, 50A
0
0 25 50 75 100 125
TJ, Junction Temperature (°C)
www.microsemi.com
5-6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APTGF100A120TG.PDF ] | |
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