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PDF APT50GT60SRG Data sheet ( Hoja de datos )
| Número de pieza | APT50GT60SRG | |
| Descripción | Thunderbolt IGBT | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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TYPICAL PERFORMANCE CURVES
600VA PT 50GT60BR_SR(G)
APT50GT60BR APT50GT60SR
APT50GT60BRG* APwwTw5.D0aGtaTSh6e0etS4UR.cGom*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Thunderbolt IGBT®
The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
switching speed.
• Low Forward Voltage Drop
• High Freq. Switching to 100KHz
• Low Tail Current
• RBSOA and SCSOA Rated
• Ultra Low Leakage Current
(B)
TO-247
GC E
D3PAK
(S)
C
GE
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT50GT60BR_SR(G) UNIT
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current 7 @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±30
110
52
150
150A @ 600V
446
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA)
Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
MIN TYP
600
3
4
1.7 2.0
2.2
MAX Units
5 Volts
2.5
25
TBD
120
µA
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MicrosemiWebsite-http://www.microsemi.com
1 page  
TYPICAL PERFORMANCE CURVES
4,000
Cies
1,000
500
Coes
Cres
100 0 10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT50GT60BR_SR(G)
160
140 www.DataSheet4U.com
120
100
80
60
40
20
0 0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.30
0.25
0.20
D = 0.9
0.7
0.15
0.5
Note:
0.10
0.3
t1
0.05
0.1
SINGLE PULSE
t2
Duty Factor D = t1/t2
0
10-5
0.05
10-4
10-3
10-2
Peak TJ = PDM x ZθJC + TC
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Dissipated Power
(Watts)
TJ (°C)
0.114
0.0057
TC (°C)
0.113
0.0276
iZmEpXTedaarencthees:eCxtaesrenatol tshienrkm, al
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
120
50
Fmax = min (fmax, fmax2)
10
fmax1
=
td(on)
+
0.05
tr + td(off)
+
tf
TJ
TC
= 125°C
= 75°C
D = 50 %
VCE = 400V
2 RG = 4.3Ω
fmax2 =
Pdiss - Pcond
Eon2 + Eoff
Pdiss =
TJ - TC
RθJC
10 20 30 40 50 60 70 80 90 100
Figure 20, OICp,eCraOtiLnLgE CFTreOqRueCnUcRyR vEsNCTo(Alle) ctor Curr ent
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APT50GT60SRG.PDF ] | |
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