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PDF APT30GS60BRDLG Data sheet ( Hoja de datos )
| Número de pieza | APT30GS60BRDLG | |
| Descripción | Resonant Mode Combi IGBT | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APT30GS60BRDL(G)
600V, 30A, VwCwEw(O.DNa) t=aS2h.8eVet4TUy.pciocmal
Resonant Mode Combi IGBT®
The Thunderbolt HS™ IGBT used in this resonant mode combi is based on thin wafer non-punch through
(NPT) technology similar to the Thunderbolt®
turn-on energy Eoff. The low switching losses
series,
enable
obpuet rtaratidoensathisgwhietcrhVinCgE(fOreNq) ufoerncsiiegsnioficvaenr t1ly00lokwHezr,
approaching power MOSFET performance but lower cost.
TO-247
Single die
IGBT with
separate DL
An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient make it
easy to parallel Thunderbolts HS™ IGBT's. Controlled slew rates result in very good noise and oscillation
immunity and low EMI. The short circuit duration rating of 10μs make these IGBT's suitable for motor
drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. Combi
versions are packaged with a high speed, soft recovery DL series diode.
G
C
E
C
G
Features
Typical Applications
E
• Fast Switching with low EMI
• Tight parameter distribution
• Very Low EOFF for Maximum Efficiency • Easy paralleling
• Short circuit rated
• Low Forward Diode Voltage (VF)
• Low Gate Charge
• Ultrasoft Recovery Diode
• RoHS Compliant
• ZVS Phase Shifted Bridge
• Resonant Mode Switching
• Phase Shifted Bridge
• Welding
• Induction heating
• High Frequency SMPS
Absolute Maximum Ratings
Symbol
I C1
I C2
I CM
VGE
SSOA
tSC
Parameter
Continuous Collector Current TC = @ 25°C
Continuous Collector Current TC = @ 100°C
Pulsed Collector Current 1
Gate-Emitter Voltage
Switching Safe Operating Area
Short Circut Withstand Time 3
Rating
54
30
113
±30V
113
10
Unit
A
V
µs
Thermal and Mechanical Characteristics
Symbol Parameter
PD Total Power Dissipation TC = @ 25°C
RθJC Junction to Case Thermal Resistance
RθCS
TJ, TSTG
TL
Case to Sink Thermal Resistance, Flat Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
WT Package Weight
IGBT
Diode
Min Typ Max Unit
- - 250 W
- - 0.50
1.0 °C/W
- 0.11 -
-55 - 150
°C
- - 300
- 0.22 -
oz
- 5.9 -
g
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed.
Microsemi Website - http://www.microsemi.com
1 page  
TYPICAL PERFORMANCE CURVES
200
100
ICM
200
100
ICM
APT30GS60BRDL(G)
www.DataSheet4U.com
10
VCE(on) 13µs
100µs
1ms
1 10ms
100ms
DC line
TJ = 125°C
TC = 75°C
0.1
1
10
100 800
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
Figure 17, Forward Safe Operating Area
10 VCE(on) 13µs
100µs
1ms
1
TJ = 150°C
TC = 25°C
10ms
100ms
DC line
Scaling for Different Case & Junction
Temperatures:
0.1
1
IC = IC(TC = 25°C)*(TJ - TC)/125
10 100
800
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
Figure 18, Maximum Forward Safe Operating Area
0.60
0.50
0.40
0.30
0.20
0.10
0
10-5
0.9
0.7
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
TJ (°C)
TC (°C)
Dissipated Power
(Watts)
0.0838
0.207
0.209
0.00245
0.00548
0.165
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Figure 20, Transient Thermal Impedance Model
120
TC = 75°C
TC = 100°C
10
F
max
=
min
(fmax,
f
max2)
0.05
fmax1 = t d(on) + tr + td(off) + tf
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 400V
1 RG = 9.1Ω
fmax2 =
Pdiss - P cond
E on2 + E off
Pdiss =
TJ - T C
R θJC
0 10 20 30 40 50
IC, COLLECTOR CURRENT (A)
Figure 21, Operating Frequency vs Collector Current
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet APT30GS60BRDLG.PDF ] | |
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