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PDF APT17N80BC3 Data sheet ( Hoja de datos )
| Número de pieza | APT17N80BC3 | |
| Descripción | Super Junction MOSFET | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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APT17N80BC3
APT17N80SC3www.DataSheet4U.com
800V 17A 0.290Ω
Super Junction MOSFET
D3PAK
COOLMOS
Power Semiconductors
• Ultra low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• TO-247 or Surface Mount D3PAK Package
TO-247
D
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT17N80BC3_SC3 UNIT
VDSS
ID
IDM
VGS
VGSM
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
800 Volts
17
Amps
51
±20 Volts
±30
PD
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
208
1.67
Watts
W/°C
TJ,TSTG
TL
dv/dt
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 640V, ID = 17A, TJ = 125°C)
Repetitive Avalanche Current 7
Repetitive Avalanche Energy 7
Single Pulse Avalanche Energy 4
-55 to 150
300
50
17
0.5
670
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 11A)
0.25 0.29
IDSS
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 150°C)
0.5 25
250
IGSS Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±100
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
2.10 3
3.9
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Ohms
µA
nA
Volts
APT Website - http://www.advancedpower.com
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"
1 page  
10 %
td(on)
90%
t
5%
r
10 %
Gate Voltage
TJ = 125 C
5%
Drain Current
Drain Voltage
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
VDD
APT15DF100
IC VCE
D.U.T.
G
Figure 20, Inductive Switching Test Circuit
APT17N80BC3_SC3
90%
Drain Current
td(off)
www.DataSheet4U.com
Gate Voltage
TJ = 125 C
90% Drain Voltage
tf
Switching Energy
10%
0
Figure 19, Turn-off Switching Waveforms and Definitions
TO-247 Package Outline
D3PAK Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
1.04 (.041)
1.15 (.045)
0.46
0.56
(.018)
(.022)
{3
Plcs}
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.22 (.048)
1.32 (.052)
Revised
4/18/95
13.79 (.543)
13.99 (.551)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
5 Page | ||
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| PDF Descargar | [ Datasheet APT17N80BC3.PDF ] | |
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