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PDF PMGD8000LN Data sheet ( Hoja de datos )
| Número de pieza | PMGD8000LN | |
| Descripción | Dual UTrenchMOS logic level FET | |
| Fabricantes | NXP Semiconductors | |
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PMGD8000LN
Dual µTrenchMOS™ logic level FET
Rev. 01 — 27 February 2003
MBD128
www.DataSheet4U.com
Product data
1. Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PMGD8000LN in SOT363 (SC-88).
2. Features
s TrenchMOS™ technology
s Very fast switching
s Logic level compatible
s Subminiature surface mount package.
3. Applications
s Battery management
s High-speed switch
s Low power DC-to-DC converter.
4. Pinning information
Table 1: Pinning - SOT363 (SC-88), simplified outline and symbol
Pin Description
Simplified outline
1 source (s1)
2 gate (g1)
6 54
3 drain (d2)
4 source (s2)
5 gate (g2)
6 drain (d1)
1 23
Top view
MSA370
SOT363 (SC-88)
Symbol
d1 d2
s1 g1 s2 g2
MSD901
1 page  
Philips Semiconductors
PMGD8000LN
Dual µTrenchMwOwSw™.DalotagSihceelet4vUe.lcoFmET
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS drain-source leakage current
IGSS gate-source leakage current
ID = 10 µA; VGS = 0 V
ID = 100 µA; VDS = VGS; Figure 9
VDS = 30 V; VGS = 0 V
Tj = 25 °C
Tj = 55 °C
VGS = ±10 V; VDS = 0 V
RDSon drain-source on-state resistance
VGS = 4 V; ID = 10 mA; Figure 7 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 2.5 V; ID = 1 mA; Figure 7 and 8
Tj = 25 °C
Tj = 150 °C
Dynamic characteristics
Qg(tot) total gate charge
VDD = 10 V; VGS = 4.5 V; ID = 0.1 A; Figure 13
Qgs gate-source charge
Qgd gate-drain (Miller) charge
Ciss input capacitance
VGS = 0 V; VDS = 5 V; f = 1 MHz; Figure 11
Coss output capacitance
Crss
td(on)
tr
reverse transfer capacitance
turn-on delay time
rise time
VDD = 3 V; RL = 100 Ω; VGS = 4.5 V; RG = 6 Ω
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain (diode forward) voltage IS = 0.1 A; VGS = 0 V; Figure 12
Min Typ Max Unit
30 -
0.8 -
-V
1.5 V
- 0.01 1.0 µA
- - 10 µA
- 10 100 nA
- 1.8 8 Ω
- 2.9 12.8 Ω
- 2.9 13 Ω
- 4.6 21 Ω
- 350 - pC
- 60 - pC
- 120 - pC
- 18.5 - pF
- 12.5 - pF
- 9 - pF
- 10 - ns
- 7 - ns
- 15 - ns
- 7 - ns
- 0.77 1.35 V
9397 750 10939
Product data
Rev. 01 — 27 February 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5 of 12
5 Page 
Philips Semiconductors
11. Data sheet status
PMGD8000LN
Dual µTrenchMwOwSw™.DalotagSihceelet4vUe.lcoFmET
Level Data sheet status[1]
I Objective data
II Preliminary data
III Product data
Product status[2][3]
Development
Qualification
Production
Definition
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
14. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
9397 750 10939
Product data
Rev. 01 — 27 February 2003
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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