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PDF TPC6110 Data sheet ( Hoja de datos )
| Número de pieza | TPC6110 | |
| Descripción | Field Effect Transistor Silicon P Channel MOS Type | |
| Fabricantes | Toshiba Semiconductor | |
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TPC6110
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MwOwSwⅥ.D)ataSheet4U.com
TPC6110
Power Management Switch Applications
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V
(VDS = −10 V, ID = −0.1mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
−30
−30
−25/+20
−4.5
−18
2.2
0.7
3.4
−2.3
0.025
150
−55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
Rth (ch-a)
Rth (ch-a)
56.8 °C/W
178.5 °C/W
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See other pages.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Circuit Configuration
654
123
1 2009-07-17
1 page  
120
Common source
Pulse Test
RDS (ON) − Ta
90 ID = −1.1, −2.2, −4.5 A
60 VGS = −4.5 V
30
VGS = −10 V
ID = −1.1, −2.2, −4.5 A
0
−80 −40 0 40 80 120 160
Ambient temperature Ta (°C)
TPC6110
www.DataSheet4U.com
−100
−10
IDR − VDS
Common source
Ta = 25°C
Pulse Test
−10
−4.5
−3
−1 −1 VGS = 0 V
−0.1
0
0.4 0.8 1.2
Drain-source voltage VDS (V)
1.6
10000
1000
Capacitance – VDS
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Ciss
100 Coss
Crss
10
−0.1
−1 −10
Drain-source voltage VDS (V)
−100
Vth − Ta
−2.0
−1.6
−1.2
−0.8
−0.4
Common source
VDS = −10 V
ID = −0.1mA
Pulse test
0
−80 −40
0
Common source
VGS = −10 V
ID = −0.1 mA
Pulse Test
40 80 120 160
Ambient temperature Ta (°C)
2.5
(1) t = 5s
2.0
PD − Ta
(1) Device mounted on a glass-epoxy board
(a) (Note 2a)
(2) Device mounted on a glass-epoxy board
(b) (Note 2b)
1.5
1.0
(2) t = 5s
0.5
0
0 40 80 120 160
Ambient temperature Ta (°C)
Dynamic input / output
characteristics
−30
Common source
−25 VDS = −24 V
ID = −4.5 A
Ta = 25°C
Pulse Test
−30
−25
−20 −20
−15
−12
−10
−6
−5
−12
−6
VGS
VDD = −24 V
−15
−10
−5
00
0 4 8 12 16 20
Total gate charge Qg (nC)
5 2009-07-17
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPC6110.PDF ] | |
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