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PDF AS5011 Data sheet ( Hoja de datos )

Número de pieza AS5011
Descripción Low Power Integrated Hall IC
Fabricantes austriamicrosystems AG 
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AS5011
Low Power Integrated Hall IC for Human Interface Applications
Data Sheet
1 General Description
The AS5011 is a complete Hall Sensor IC for smart
navigation key applications to meet the low power
requirements and host SW integration challenges for
products such as cell phones and smart handheld
devices.
Due to the on chip processing engine, system
designers are not tasked with integrating complex SW
algorithms on their host processor thus leading to
rapid development cycles.
The AS5011 single-chip IC includes 4 integrated Hall
sensing elements for detecting up to ±2mm lateral
displacement, high resolution ADC, XY coordinate
and motion detection engine combined with a smart
power management controller.
The X and Y positions coordinates and magnetic field
information for each Hall sensor element is
transmitted over a 2-wire I²C compatible interface to
the host processor.
The AS5011 is available in a small 16-pin
5x5x0.55mm QFN package and specified over an
operating temperature of
-20 to +80°C.
Figure 1 Typical Arrangement of AS5011 and Axial
Magnet
3 Key Features
2.7 to 3.6V operating voltage
Down to 1.8V peripheral supply voltage
Less than 200µA current consumption in Low
Power mode
Less than 50µA current consumption in Shutdown
mode
Lateral magnet movement radius up to 2mm
I²C interface up to 4MHz
Configurable interrupt output for motion detection
Three operating modes:
Shutdown mode
Low Power mode
Full Power mode
4 Applications
The AS5011 is ideal for small factor manual input
devices in battery operated equipment, such as
Mobile phones
MP3 players
PDA’s
GPS receivers
Gaming consoles
2 Benefits
Complete system-on-chip
High reliability due to non-contact sensing
Low power consumption
Figure 2 AS5011 Block Diagram
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AS5011 pdf
AS5011
Data Sheet
6.4 Power modes
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The AS5011 can operate in three different power modes, depending on the power consumption requirements of the
whole system.
Power Mode
[0x76] Register Description
Sleep phase
Power state between wakeups in Shutdown and Low Power modes
RC clock and analog part OFF
Digital part in static mode
Shutdown mode
1001_x00x
Default mode after power on
<50µA current consumption
LP_Pulsed = 1 Wake up every 80ms from Sleep phase
LP_Active = 0 Hall elements in reduced power during wake up
LP_Continue = RC clock ON
0 Interrupt LOW on INTn if the magnet is away from the center above the
INT_wup_en = Xp Xn Yp Yn threshold values (1)
1
Low Power mode
110x_100x
<200µA current consumption
Wake up every 20ms from Sleep phase
LP_Pulsed = 1 Hall elements in high power during wake up for better accuracy
LP_Active = 1 RC clock ON
LP_Continue = Interrupt LOW on INTn when XY coordinates are ready to be read (1)
0
INT_act_en = 1
Full Power mode
010x_y00x
<8mA current consumption
Continuous read
LP_Pulsed = 0 Hall elements in high power permanently
LP_Active = 1 RC clock ON
LP_Continue = Interrupt LOW on INTn when XY coordinates are ready to be read (1)
0 If INT_act_en = 1, after reading the XY coordinate, the next sample is
INT_act_en = y stored and won’t be updated until the next read of XY with interrupt
release.
If INT_act_int_en = 0, the last converted XY coordinate is read in real
time.
(1) The interrupt will be released to HIGH by reading the X_res_int or Y_res_int registers, or by switching the
device into a different power mode.
Table 2: Overview of typical power modes
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Revision 3.10
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AS5011 arduino
AS5011
Data Sheet
8.2 Operating conditions
(operating conditions: Tamb = -20 to +80°C, VDD = 3.3V)
Parameter
Core Supply voltage
Peripheral Supply voltage
Current consumption on core
supply,
Shutdown mode
Current consumption on core
supply,
Low Power mode
Current consumption on core
supply,
Full Power mode
Symbol Min
VDD 2.7
VDDp 1.8
Typ Max
3.6
VDD
+0.3
IDDs
50
IDDl
200
IDDf
8
Current consumption on IO supply IDDp
1
Polling clock rate, Shutdown mode
Polling clock rate, Low Power
mode
Coordinate conversion time
tP,W
tP,A
tconv
lateral movement radius
dx
dy
65.6 80 94.4
16.4 20 23.6
330 380 455
±1.8 2 ±2.3
type of magnet
Hall array diameter
d2
3
RH 2.2
magnetic field strength
BZ 30
120
Ambient temperature range
Magnetic field measurement
resolution
Resolution of XY displacement
IC package
Power supply filtering capacitors
Tamb -20
+80
11
8
QFN16
5x5x0.55mm
100
100
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Unit Note
V
V
open drain outputs : SCL, SDA,
INT/
average current pin VDD
µA pulsed current IDDf during tconv
with period tP,W
average current pin VDD
µA pulsed current IDDf during tconv
with period tP,A
mA continuous current pin VDD
average current pin VDDp, 20ms
µA i²C polling, 47k pullup resistor on
SDA
ms internal
ms internal
µs Full Power mode
vertical magnetic field at magnet
mm centre, measured at the chip
surface
mm cylindrical; axial magnetized
mm
mT
vertical magnetic field at magnet
center; measured at chip surface
°C
bit Internal
bit over 2*dx and 2*dy axis
nF Ceramic capacitor VDD - VSS
nF Ceramic capacitor VDDp - VSS
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