(PDF) BTD882J3 Datasheet - Low Vcesat NPN Epitaxial Planar Transistor

Número de pieza	BTD882J3
Descripción	Low Vcesat NPN Epitaxial Planar Transistor
Fabricantes	Cystech Electonics Corp
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No Preview Available ! CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD882J3 BVCEO IC RCESAT wSIspwseuwce.d.DNDaoa.tat:eSC:h82e40e80Jt343.U-0H.4c.0o2m Revised Date :2009.02.04 Page No. : 1/7 30V 3A 125mΩ typ. Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB772J3 • RoHS compliant package Symbol BTD882J3 Outline TO-252 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : 1. Single Pulse Pw≦350us,Duty≦2%. Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj Tstg BTD882J3 Limit 40 30 5 3 7 1 10 150 -55~+150 1 Unit V V V A A W °C °C CYStek Product Specification 1 page Reel Dimension CYStech Electronics Corp. wSIspwseuwce.d.DNDaoa.tat:eSC:h82e40e80Jt343.U-0H.4c.0o2m Revised Date :2009.02.04 Page No. : 5/7 Carrier Tape Dimension BTD882J3 CYStek Product Specification 5 Page

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PDF BTD882J3 Data sheet ( Hoja de datos )