(PDF) BTD882AM3 Datasheet - Low VCE(sat) NPN Epitaxial Planar Transistor

Número de pieza	BTD882AM3
Descripción	Low VCE(sat) NPN Epitaxial Planar Transistor
Fabricantes	Cystech Electonics Corp
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No Preview Available ! CYStech Electronics Corp. Low VCE(sat) NPN Epitaxial Planar Transistor BTD882AM3 Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB772AM3 wSIspwseuwce.d.DNDaoa.tat:eSC:h82e40e80Mt34.3U0-.6Hc.o17m Revised Date : 2005.07.11 Page No. : 1/4 Symbol BTD882AM3 Outline SOT-89 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Power Dissipation Pd Thermal Resistance, Junction to Ambient RθJA Junction Temperature Tj Storage Temperature Tstg Note : 1. Single Pulse Pw≦350µs, Duty≦2%. 2. When mounted on FR-4 PCB with area measuring 10×10×1 mm 3. When mounted on ceramic with area measuring 40×40×1 mm BTD882AM3 Limit 80 50 5 3 7 (Note 1) 600 1 (Note 2) 2 (Note 3) 208 125 (Note 2) 62.5 (Note 3) 150 -55~+150 Unit V V V A A mW W W °C/W °C/W °C/W °C °C CYStek Product Specification 1 page

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PDF BTD882AM3 Data sheet ( Hoja de datos )