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PDF TSM3900D Data sheet ( Hoja de datos )
| Número de pieza | TSM3900D | |
| Descripción | 20V Dual N-Channel MOSFET | |
| Fabricantes | Taiwan Semiconductor Company | |
| Logotipo |  |
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TSM3900Dwww.DataSheet4U.com
20V Dual N-Channel MOSFET
SOT-26
Pin Definition:
1. Gate 1 6. Drain 1
2. Source 2 5. Source 1
3. Gate 2 4. Drain 2
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
55 @ VGS = 4.5V
20 70 @ VGS = 2.5V
110 @ VGS = 1.8V
ID (A)
2.0
1.5
1.0
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Block Diagram
Part No.
Package
TSM3900DCX6 RF SOT-26
Packing
T&R
Dual N-Channel MOSFET
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a,b
Maximum Power Dissipation
Ta = 25 oC
Ta = 70 oC
ID
IDM
IS
PD
Operating Junction Temperature
TJ
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Performance
Parameter
Junction to CaseThermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
Symbol
RӨJC
RӨJA
Limit
20
±8
2
8
1.6
2.0
1.3
+150
-55 to +150
Limit
30
80
Unit
V
V
A
A
A
W
oC
oC
Unit
oC/W
oC/W
1/6 Version: A07
1 page  
TSM3900Dwww.DataSheet4U.com
20V Dual N-Channel MOSFET
SOT-26 Mechanical Drawing
SOT-26 DIMENSION
DIM
MILLIMETERS
MIN MAX
INCHES
MIN MAX.
A
2.70
3.00
0.106
0.118
B
0.25
0.50
0.010
0.020
C 1.90(typ)
0.075(typ)
D 0.95(typ)
0.037(typ)
E
1.50
1.70
0.059
0.067
F
1.05
1.35
0.041
0.053
H
2.60
3.00
0.102
0.118
L 0.60(typ)
0.024(typ)
5/6 Version: A07
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TSM3900D.PDF ] | |
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