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Número de pieza | TSM1426 | |
Descripción | 30V N-Channel MOSFET | |
Fabricantes | Taiwan Semiconductor Company | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TSM1426 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TSM1426
30V N-Chawnwwn.DealtaMSheOet4SU.cFomET
SOT-363
Pin Definition:
1. Drain 6. Drain
2. Drain 5, Drain
3. Gate 4. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
20 75 @ VGS = 10V
115 @ VGS = 4.5V
Features
● Advance Trench Process Technology
● PWM Optimized
Application
● Boost Converter in Portable devices
● Low Current Synchronous Rectifier
Ordering Information
Block Diagram
Part No.
Package
TSM1424CU6 RF SOT-363
Packing
3Kpcs / 7” Reel
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a,b
Maximum Power Dissipation
Ta = 25oC
Ta = 75oC
VDS
VGS
ID
IDM
IS
PD
Operating Junction Temperature
Operating Junction and Storage Temperature Range
TJ
TJ, TSTG
Thermal Performance
Parameter
Symbol
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
RӨJF
RӨJA
Limit
30
±20
3.6
10
1.3
1.6
0.8
+150
-55 to +150
Limit
45
80
ID (A)
3.6
2.9
Unit
V
V
A
A
A
W
oC
oC
Unit
oC/W
oC/W
1/4 Version: Preliminary
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet TSM1426.PDF ] |
Número de pieza | Descripción | Fabricantes |
TSM1426 | 30V N-Channel MOSFET | Taiwan Semiconductor Company |
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