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Número de pieza | TSM13N50 | |
Descripción | 500V N-Channel Power MOSFET | |
Fabricantes | Taiwan Semiconductor Company | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TSM13N50 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! TO-220
Preliminary
TSM13N50
500V N-Channel Pwowww.eDartaMSheOet4SU.cFomET
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
500 0.48 @ VGS =10V
ID (A)
6.5
General Description
The TSM13N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half
bridge.
Features
Block Diagram
● Low RDS(ON) 0.48Ω (Max.)
● Low gate charge typical @ 36nC (Typ.)
● Low Crss typical @ 23pF (Typ.)
● Fast Switching
Ordering Information
Part No.
TSM13N50CZ C0
TSM13N50CI C0
Package
TO-220
ITO-220
Packing
50pcs / Tube
50pcs / Tube
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
VGS
ID
Pulsed Drain Current *
IDM
Avalanche Current (Single) (Note 2)
Single Pulse Avalanche Energy (Note 2)
IAS
EAS
Avalanche Current (Repetitive) (Note 1)
IAR
Repetitive Avalanche Energy (Note 1)
Maximum Power Dissipation @Ta = 25oC
EAR
PD
Operating Junction Temperature
Storage Temperature Range
* Limited by maximum junction temperature
TJ
TSTG
N-Channel MOSFET
Limit
500
±30
13
52
13
751
13
19.5
40
150
-55 to +150
Unit
V
V
A
A
A
mJ
A
mJ
W
ºC
oC
1/7 Version: Preliminary
1 page Preliminary
TSM13N50
500V N-Channel Pwowww.eDartaMSheOet4SU.cFomET
TO-220 Mechanical Drawing
TO-220 DIMENSION
DIM
MILLIMETERS
MIN MAX
INCHES
MIN MAX
A 10.000 10.500
0.394
0.413
B 3.740
3.910
0.147
0.154
C 2.440
2.940
0.096
0.116
D - 6.350 - 0.250
E 0.381
1.106
0.015
0.040
F 2.345
2.715
0.092
0.058
G 4.690
5.430
0.092
0.107
H 12.700 14.732
0.500
0.581
J 14.224 16.510
0.560
0.650
K 3.556
4.826
0.140
0.190
L 0.508
1.397
0.020
0.055
M 27.700 29.620
1.060
1.230
N 2.032
2.921
0.080
0.115
O 0.255
0.610
0.010
0.024
P 5.842
6.858
0.230
0.270
5/7 Version: Preliminary
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet TSM13N50.PDF ] |
Número de pieza | Descripción | Fabricantes |
TSM13N50 | 500V N-Channel Power MOSFET | Taiwan Semiconductor Company |
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