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PDF TLE6284G Data sheet ( Hoja de datos )
| Número de pieza | TLE6284G | |
| Descripción | H-Bridge Driver IC | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Data Shewewtw.TDaLtaESh6ee2t48U.c4oGm
H-Bridge Driver IC
Features
Product Summary
• Compatible to very low ohmic normal
level input N-Channel MOSFETs
• PWM – DIR - Interface
• PWM frequency up to 50kHz
• Operates down to 7.5 V
supply voltage
Turn on current
Turn off current
Supply voltage range
Gate Voltage
Temperature range
• Low EMC sensitivity and emission
• Adjustable dead time with shoot through protection
• Deactivation of dead time and shoot through protection possible
• Short circuit protection for each Mosfet can be disabled and adjusted
• Driver undervoltage shut down
• Reverse polarity protection for the driver IC
• Fast disable function / Inhibit for low quiescent current
• Input with TTL characteristics
• 2 bit diagnosis
• Thermal overload warning for driver IC
• Shoot through protection
• Integrated bootstrap diodes
IGxx(on)
IGxx(off)
VVs
VGS
TJ
850
580
7.5 … 60
10
-40...+150
mA
mA
V
V
°C
P-DSO-20
Application
• Dedicated for DC-brush high current motor bridges in PWM control mode for 12, 24 and 42V powernet applica-
tions.
• The input structure allows an easy control of a DC-brush motor
General Description
H-bridge driver IC for MOSFET power stages with multiple protection functions.
The TLE6184G is very similar to the TLE6281G. The major difference is that the Short Circuit protection level of
the TLE6284G can be adjusted by external resistors or even disabled. The pin outs are different as well.
Block Diagram
VS
GND
INH
Linear
Regulator
INH
Charge Pump
PWM
DIR
DT/DIS
HS1
Input control
LS1
Dead time
HS2
LS2
Level
ER1
ER2
Undervoltage
Short circuit Detect.
Overtemp. warning
OR
Undervoltage HSx
Undervoltage LSx
Short Circuit Detection
Tj > 170oC typ.
Shift
Floating HS Driver 1
+
VGS limitation HS1
+
Short circuit
detect.
SCD
+
Undervoltage
Floating HS Driver 2
+
VGS limitation HS2
+
Short circuit
detect.
SCD
+
Undervoltage
Floating LS Driver 1
+
VGS limitation LS1
+
Short circuit
detect.
SCD
+
Undervoltage
Floating LS Driver 2
+
VGS limitation LS2
+
Short circuit
detect.
SCD
+
Undervoltage
BH1
BH2
DH1
GH1
SH1
DH2
GH2
SH2
DL1
GL1
DL2
GL2
1 2006-01-30
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Data Shewewtw.TDaLtaESh6ee2t48U.c4oGm
Max. voltage range at GHx3
Max. voltage range at SHx3
Max. voltage range at GLx
Max. voltage range at DLx
Max. voltage difference BHx – SHx
Max. voltage difference Gxx – Sxx
PWM frequency
Minimum on time external lowside switch – static con-
dition @ 20 kHz; QGate = 200nC
VGHx
VSHx
VGLx
VDLx
VBHx-VSHx
VGxx-VSxx
FPWM
tp(min)
-6.8 86
V
-6.8 75
V
-2 12
V
-2 75
V
-0.3 12
V
-0.3 11
V
0 50 kHz
2 µs
Electrical Characteristics
Parameter and Conditions
at Tj = -40…150°C, unless otherwise specified
and supply voltage range VS = 7.5 … 60V; fPWM = 20kHz
Symbol
Values
Unit
min typ max
Static Characteristics
Low level output voltage (VGSxx) @ I=10mA
High level output voltage (VGSxx) @ I=-10mA
Supply current at VS (device disabled)
@ Vbat= VS =14V RDT=400kΩ
Supply current at VS (device disabled)
@ Vbat= VS =42V RDT=400kΩ
Quiescent current at VS (device inhibited)
@ Vbat= VS =14V RDT=400kΩ
RSCD1+RSCD2 = RSCD3+RSCD4 =12kΩ
Quiescent current at VS (device inhibited)
@ Vbat= VS =42V RDT=400kΩ
RSCD1+RSCD2 = RSCD3+RSCD4 =12kΩ
Supply current at VS @ Vbat= VS =14V,
fPWM = 20kHz (Outputs open)
Supply current at VS @ Vbat= VS =14V,
fPWM = 50kHz (Outputs open)
Supply current at VS @ Vbat= VS =42V,
fPWM = 20kHz (Outputs open)
Low level input voltage
High level input voltage
Input hysteresis
Inhibit trip level
∆VLL
∆VHL
IVS(dis)14V
IVS(dis)42V
IVS(inh)14V
-- 60 150 mV
8 10 11 V
-- 4 8 mA
-- 4 8 mA
-- 0.6 1.5 mA
IVS(inh)42V
-- 0.6 1.5 mA
IVS(open)14V
IVS(open)14V
IVS(open)42V
VIN(LL)
VIN(HL)
∆VIN
VINH
--
--
--
--
2.0
100
1.3
7
7
7
--
--
170
2
15 mA
15 mA
15 mA
1.0 V
-- V
mV
3V
5 2006-01-30
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Data Shewewtw.TDaLtaESh6ee2t48U.c4oGm
Gate Drive characteristics
VPWM_HS
VPWM_HS
Logic
+
Level
Shift
+
VGS
limit
+
Under
voltage
BHx
Vs
SCD DHx
iGxx(on) GHx
CB
iGxx(off)
iGHx
iGxx(on)
iGxx(off)
TLE6284G
High Side Driver
SHx
Motor
iGHx
850 mA Peak
580 mA Peak
Test Conditions :
- Turn On : VGS = 0V, Tj = 25oC
- Turn Off : VGS = 10V, Tj = 25oC
This figure represents the simplified internal
circuit of one high side gate drive. The drive
circuit of the low sides look similar.
This figure illustrates typical voltage and
current waveforms of the high side gate drive;
the associated waveforms of the low side
drives look similar.
11 2006-01-30
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet TLE6284G.PDF ] | |
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