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PDF MMBTSC1815 Data sheet ( Hoja de datos )

Número de pieza MMBTSC1815
Descripción Silicon Epitaxial Planar Transistor
Fabricantes SEMTECH ELECTRONICS 
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No Preview Available ! MMBTSC1815 Hoja de datos, Descripción, Manual

MMBTSC1815
www.DataSheet4U.com
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into four groups O, Y,
G and L, according to its DC current gain. As
complementary type the PNP transistor
MMBTSA1015 is recommended.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
SOT-23 Plastic Package
Symbol
VCBO
VCEO
VEBO
IC
IB
Ptot
Tj
TS
Value
60
50
5
150
50
200
150
-55 to +150
Unit
V
V
V
mA
mA
mW
OC
OC
Characteristics at Tamb=25 OC
Parameter
DC Current Gain
at VCE=6V, IC=2mA
Current Gain Group
at VCE=6V, IC=150mA
Collector Saturation Voltage
at IC=100mA, IB=10mA
Base Saturation Voltage
at IC=100mA, IB=10mA
Collector Cutoff Current
at VCB=60V
at VEB=5V
Gain Bandwidth Product
at VCE=10V, IC=1mA
Output Capacitance
at VCB=10V, f=1MHz
Noise Figure
at VCE=6V, IC=0.1mA, f=1KHz, RG=10Kat
O
Y
G
L
Symbol Min.
hFE
hFE
hFE
hFE
hFE
VCE(sat)
VBE(sat)
ICBO
IEBO
fT
COB
NF
70
120
200
350
25
-
-
-
-
80
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
2
1
Max.
Unit
140
240
400
700
-
0.25
1
0.1
0.1
-
3
1
-
-
-
-
-
V
V
µA
µA
MHz
pF
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 02/12/2005

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