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PDF MMBTSB1197 Data sheet ( Hoja de datos )
| Número de pieza | MMBTSB1197 | |
| Descripción | Silicon Epitaxial Planar Transistor | |
| Fabricantes | SEMTECH ELECTRONICS | |
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MMBTSB1197
PNP Silicon Epitaxial Planar Transistor
Low frequency transistor
The transistor is subdivided into two groups Q and
R according to its DC current gain.
www.DataSheet4U.com
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta =25 OC
Parameter
DC Current Gain
at -VCE = 3 V, -IC = 100 mA
Collector Cutoff Current
at -VCB = 20 V
Emitter Cutoff Current
at -VEB = 4 V
Collector Base Breakdown Voltage
at -IC = 50 µA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
Emitter Base Breakdown Voltage
at -IE = 50 µA
Collector Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
Output Capacitance
at -VCB = 10 V, IE = 0 A, f = 1 MHz
Transition Frequency
at -VCE = 5 V, IE = 50 mA, f = 100 MHz
Symbol
-VCBO
-VCEO
-VEBO
-IC
Ptot
Tj
TS
SOT-23 Plastic Package
Value
40
32
5
800
200
150
-55 to +150
Unit
V
V
V
mA
mW
OC
OC
Symbol
Q hFE
R hFE
-ICBO
-IEBO
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
Cob
fT
Min.
120
180
-
-
40
32
5
-
-
50
Max.
270
390
0.5
0.5
-
-
-
0.5
30
-
Unit
-
-
µA
µA
V
V
V
V
pF
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 21/12/2005
1 page | ||
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| PDF Descargar | [ Datasheet MMBTSB1197.PDF ] | |
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