|
|
PDF PSMN7R0-100PS Data sheet ( Hoja de datos )
| Número de pieza | PSMN7R0-100PS | |
| Descripción | N-channel 100V 6.8 MOhm Standard Level MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PSMN7R0-100PS (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
|
No Preview Available !
PSMN7R0-100PS
N-channel
100V
6.8
mΩ
standard
level
www.DataSheet4U.com
MOSFET in TO220
Rev. 02 — 7 January 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
VGS = 10 V; Tj(init) = 25 °C;
ID = 100 A; Vsup = 100 V;
unclamped; RGS = 50 Ω
QGD
gate-drain charge
VGS = 10 V; ID = 25 A;
VDS = 50 V; see Figure 14
and 17
QG(tot) total gate charge
VGS = 10 V; ID = 25 A;
VDS = 50 V; see Figure 17
and 14
Min Typ Max Unit
- - 100 V
[1] - - 100 A
- - 269 W
-55 -
175 °C
- - 315 mJ
- 36 - nC
- 125 - nC
1 page  
NXP Semiconductors
PSMN7R0-100PS
N-channel 100V 6.8 mΩ standard levwewl wM.ODaStaFSEhTeeint4UT.Oco2m20
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see Figure 4
vertical in free air
Min Typ Max Unit
- 0.3 0.56 K/W
- 60 - K/W
003aad560
1
Zth (j-mb)
(K/W)
10-1
δ = 0.5
0.2
0.1
0.05
10-2
0.02
10-3
P δ = tp
T
s ingle s hot
10-4
1e -6
10-5
10-4
10-3
10-2
10-1
tp
T
1
tp (s )
t
10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN7R0-100PS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 January 2010
© NXP B.V. 2010. All rights reserved.
5 of 16
5 Page 
NXP Semiconductors
PSMN7R0-100PS
N-channel 100V 6.8 mΩ standard levwewl wM.ODaStaFSEhTeeint4UT.Oco2m20
10
VGS
(V)
8
6
4
2
0
0
003aad569
VDS = 50V
35 70 105 140
QG (nC)
Fig 17. Gate-source voltage as a function of gate charge; typical values
PSMN7R0-100PS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 January 2010
© NXP B.V. 2010. All rights reserved.
11 of 16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet PSMN7R0-100PS.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PSMN7R0-100PS | N-channel 100V 6.8 MOhm Standard Level MOSFET | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |