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PDF PSMN7R0-100ES Data sheet ( Hoja de datos )
| Número de pieza | PSMN7R0-100ES | |
| Descripción | N-channel 100V 6.8 MOhm Standard Level MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PSMN7R0-100ES
www.DataSheet4U.com
N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK.
Rev. 03 — 23 February 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
VGS = 10 V; Tj(init) = 25 °C;
ID = 100 A; Vsup ≤ 100 V;
unclamped; RGS = 50 Ω
QGD
gate-drain charge
VGS = 10 V; ID = 25 A;
VDS = 50 V; see Figure 15
and 14
QG(tot) total gate charge
VGS = 10 V; ID = 25 A;
VDS = 50 V; see Figure 14
and 15
Min Typ Max Unit
- - 100 V
[1] - - 100 A
- - 269 W
-55 -
175 °C
- - 315 mJ
- 36 - nC
- 125 - nC
1 page  
NXP Semiconductors
PSMN7R0-100ESwww.DataSheet4U.com
N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK.
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see Figure 4
vertical in free air
Min Typ Max Unit
- 0.3 0.56 K/W
- 60 - K/W
003aad560
1
Zth (j-mb)
(K/W)
10-1
δ = 0.5
0.2
0.1
0.05
10-2
0.02
10-3
P δ = tp
T
s ingle s hot
10-4
1e -6
10-5
10-4
10-3
10-2
10-1
tp
T
1
tp (s )
t
10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN7R0-100ES_3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 23 February 2010
© NXP B.V. 2010. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
PSMN7R0-100ESwww.DataSheet4U.com
N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK.
7. Package outline
Plastic single-ended package (I2PAK); low-profile 3-lead TO-262
SOT226
D1 E
D
b1
L
L1
123
ee
b
A
A1
mounting
base
Q
c
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1 b
b1
c
D
max
D1
E
e
L L1 Q
mm 4.5 1.40 0.85 1.3 0.7
4.1 1.27 0.60 1.0 0.4
11
1.6
1.2
10.3
9.7
2.54
15.0
13.5
3.30
2.79
2.6
2.2
OUTLINE
VERSION
SOT226
IEC
REFERENCES
JEDEC
JEITA
TO-262
EUROPEAN
PROJECTION
ISSUE DATE
06-02-14
09-08-25
Fig 18. Package outline SOT226 (I2PAK)
PSMN7R0-100ES_3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 23 February 2010
© NXP B.V. 2010. All rights reserved.
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