|
|
Número de pieza | TIM5964-12UL | |
Descripción | MICROWAVE POWER GaAs FET | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TIM5964-12UL (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWERwGwwa.ADastaFShEeTet4U.com
TIM5964-12UL
FEATURES
n HIGH POWER
P1dB=41.5dBm at 5.9GHz to 6.4GHz
n HIGH GAIN
G1dB=10.0dB at 5.9GHz to 6.4GHz
n BROAD BAND INTERNALLY MATCHED FET
n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS
UNIT
Output Power at 1dB Gain
P1dB
dBm
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
G1dB
IDS1
VDS= 10V
f = 5.9 to 6.4GHz
dB
A
Gain Flatness
∆G
dB
Power Added Efficiency
ηadd
%
3rd Order Intermodulation
IM3
Two-Tone Test
dBc
Distortion
Po=30.5dBm
Drain Current
IDS2
(Single Carrier Level)
Channel Temperature Rise
∆Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
Recommended gate resistance(Rg) : Rg= 100 Ω(MAX.)
A
°C
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
MIN.
40.5
9.0
-44
TYP. MAX.
41.5
10.0
3.2 3.8
±0.6
40
-47
3.2 3.8
80
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL CONDITIONS
gm VDS= 3V
IDS= 4.0A
VGSoff VDS= 3V
IDS= 40mA
IDSS VDS= 3V
VGS= 0V
VGSO IGS= -140µA
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
mS 2500
V -1.0 -2.5 -4.0
A 7.2
V -5
°C/W 2.0 2.4
uThe information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Oct. 2006
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet TIM5964-12UL.PDF ] |
Número de pieza | Descripción | Fabricantes |
TIM5964-12UL | MICROWAVE POWER GaAs FET | Toshiba Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |