(PDF) MTN7002N3 Datasheet - N-CHANNEL MOSFET

Número de pieza	MTN7002N3
Descripción	N-CHANNEL MOSFET
Fabricantes	Cystech Electonics
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No Preview Available ! CYStech Electronics Corp. N-CHANNEL MOSFET MTN7002N3 wSIspwseuwce.d.DNDaoa.tat:eSC:h32e20e50Nt243.U1.2c.1o8m Revised Date : 2005.01.07 Page No. : 1/4 Description •The MTN7002N3 is a N-channel enhancement-mode MOSFET. •Pb-free package Symbol Outline MTN7002N3 SOT-23 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Drain-Gate Voltage (RGS=1MΩ) Gate-Source Voltage Continuous Drain Current (Ta=25°C) Continuous Drain Current (Ta=100°C) Pulsed Drain Current (Ta=25°C) Total Power Dissipation (Ta=25°C) Total Power Dissipation (Tc=25°C) Operating Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Lead Temperature, for 10 second Soldering Symbol BVDSS BVDGR VGS ID ID IDM PD Tj Tstg Rth,ja Rth,jc TL Limits 60 60 ±40 200 115 800 200 500 -55~+150 -55~+150 625 250 240 1 1 2 Note : 1. The power dissipation of the package may result in a continuous drain current *2. Pulse Width ≤ 300µs, Duty cycle ≤2% Unit V V V mA mA mA mW °C °C °C/W °C/W °C MTN7002N3 CYStek Product Specification 1 page

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PDF MTN7002N3 Data sheet ( Hoja de datos )