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PDF TPCP8401 Data sheet ( Hoja de datos )
| Número de pieza | TPCP8401 | |
| Descripción | Field Effect Transistor Silicon MOS Type | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPCP8401
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS Ⅲ / πw-wMwO.DSataⅥSh)eet4U.com
TPCP8401
○ Switching Regulator Applications
○ Load Switch Applications
Unit: mm
• Lead(Pb)-Free
• Multi-chip discrete device; built-in P channel MOS FET for main
switch and N Channel MOS FET for drive
• Small footprint due to small and thin package
• Low drain-source ON resistance
: P Channel RDS (ON) = 31 mΩ (typ.)
• Low drain-source ON resistance
High forward transfer admittance
: P Channel |Yfs| = 13 S (typ.)
• Low leakage current
: P Channel IDSS = −10 µA (VDS = −12 V)
• Enhancement−mode
: P Channel Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 µA)
Absolute Maximum Ratings (Ta = 25°C)
P-ch
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Rating
−12
−12
±8
−5.5
−22.0
1.96
1.0
5.3
−2.8
0.22
150
Unit
V
V
V
A
W
W
mJ
A
mJ
°C
0.33±0.05
0.05 M A
85
0.475
1
0.65
2.9±0.1
4
S
0.025 S
0.17±0.02
B 0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
1.12+-00..1123
1.12+-00..1123
1．Source(Nch） 5．Gate(Pch)
0.28
+0.1
-0.11
2．Drain(Pch) 6．Source(Pch)
3．Drain(Pch) 7．Gate(Nch)
4．Drain(Pch) 8．Drain(Nch)
JEDEC
JEITA
―
―
TOSHIBA
2-3V1G
Weight: 0.017 g (typ.)
Circuit Configuration
87 6 5
12 3 4
Marking (Note5)
876
5
8401
※
123
4
Lot No.
1 2006-11-13
1 page  
Pch
−5
−5
−4
−3
ID – VDS
−1.8
−1.9
−2.5 −2
−3
−4, −4.5
−1.7
−1.6
−2 −1.5
−1 VGS = −1.4 V
Common source
0 Ta = 25°C Pulse test
0 −0.4 −0.8 −1.2 −1.6 −2.0
Drain-source voltage VDS (V)
−10
Common source
VDS = −10 V
Pulse test
−8
ID – VGS
−6
100°C
−4
25°C
−2
Ta = −55°C
0
0 −0.5 −1 −1.5 −2 −2.5
Gate-source voltage VGS (V)
TPCP8401
www.DataSheet4U.com
−10
−8
−6
−4
−2
0
0
ID – VDS
−2.5 −2
Common source
Ta = 25°C Pulse test
−3
−1.9
−5
−4 −1.8
−1.7
−1.6
VGS = −1.4 V
−1 −2 −3 −4 −5
Drain-source voltage VDS (V)
VDS – VGS
−1
Common source
Ta = 25°C
Pulse test
−0.8
−0.6
−0.4
−0.2
ID = −4.5 A
−1.1 A
−2.2 A
0
0 −2 −4 −6 −8 −10
Gate-source voltage VGS (V)
100
Common source
VDS = −10 V
30 Pulse test
|Yfs| – ID
Ta = −55°C
10
100°C
3 25°C
1
0.3
0.1
−0.1
−0.3
−1
−3
−10 −30
Drain current ID (A)
−100
RDS (ON) – ID
1
Common source
Ta = 25°C
Pulse test
0.3
0.1
0.03
−1.8 V
VGS = −4.5 V
−2.5 V
0.01
−0.1
−0.3
−1
−3
−10 −30
Drain current ID (A)
−100
5 2006-11-13
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet TPCP8401.PDF ] | |
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