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PDF TPCP8301 Data sheet ( Hoja de datos )
| Número de pieza | TPCP8301 | |
| Descripción | Field Effect Transistor Silicon MOS Type | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPCP8301
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MwOwSwⅣ.Da) taSheet4U.com
TPCP8301
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
0.33±0.05
0.05 M A
85
Unit: mm
• Lead (Pb)-free
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS(ON) = 25 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 14 S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −20 V)
• Enhancement model: Vth = −0.5 to −1.2V (VDS = −10 V, ID = −200 μA)
0.475
1
0.65
2.9±0.1
4
B 0.05 M B
A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power
dissipation
Single-device operation
(Note 3a)
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b)
Drain power
dissipation
Single-device operation
(Note 3a)
(t = 5 s) (Note 2b) Single-device value at
dual operation (Note 3b)
Single-pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD (1)
PD (2)
PD (1)
PD (2)
EAS
IAR
EAR
Rating
−20
−20
±12
−5
−20
1.48
1.23
0.58
0.36
6.5
−5
0.12
Unit
V
V
V
A
W
mJ
A
mJ
S
0.025 S
0.17±0.02
0.8±0.05
0.28
+0.1
-0.11
1. Source1
2. Gate1
3. Source2
4. Gate2
1.12+-00..1132
1.12+-00..1132
5. Drain2
0.28
+0.1
-0.11
6. Drain2
7. Drain1
8. Drain1
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-3V1G
Weight: 0.017 g (typ.)
Channel temperature
Storage temperature range
Tch 150 °C
Tstg −55 to 150 °C
Note: For Notes 1 to 6, see the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Circuit Configuration
87 6
5
Marking (Note 6)
876
5
12 3 4
1
8301
※
123
4
Lot No.
2006-11-17
1 page  
RDS (ON) – Ta
100 Common source
Pulse test
ID = −5 A
80 ID = −2.5 A
VGS = −2 V
60
40
20
VGS = −2.5 V VGS = −4.5 V
−1.3
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
TPCP8301
www.DataSheet4U.com
IDR – VDS
−100
−10
−1
−0.1
0
−5
−3
−1
VGS = 0 V
1
Common source
Ta = 25°C
Pulse test
0.2 0.4 0.6 0.8 1.0 1.2
Drain−source voltage VDS (V)
10000
1000
Capacitance – VDS
Common source
Ta = 25°C
VGS = 0 V
f = 1 MHz
Ciss
100 Coss
Crss
10
−0.1 −1 −10 −100
Drain−source voltage VDS (V)
2.0
1.5
(1)
(2)
1.0
PD – Ta
Device mounted on a glass-epoxy
board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation
(Note 3b)
Device mounted on a glass-epoxy
board (b)
(Note 2b)
(3) Single-device operation
(Note 3a)
(4) Single-device value at dual
operation
(Note 3b)
t = 10 s
0.5 (3)
(4)
0
0 40 80 120 160
Ambient temperature Ta (°C)
200
Vth – Ta
−1.2
−1.0
−0.8
−0.6
−0.4
Common source
−0.2 VDS = −10 V
ID = −200 μA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
Dynamic input/output
characteristics
−20
VDS
−16
Common source
ID = −5 A
Ta = 25°C
Pulse test
−10
−8
VDD = −16 V
VGS
−12 −6
−8
−8
−8
−4
VDD = −16 V
−4
−4 −4
−2
00
0 10 20 30
Total gate charge Qg (nC)
5 2006-11-17
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCP8301.PDF ] | |
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