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PDF PSMN017-60YS Data sheet ( Hoja de datos )
| Número de pieza | PSMN017-60YS | |
| Descripción | N-channel LFPAK 60V Standard Level MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PSMN017-60YS
N-channel LFPAK 60 V 17 mΩ standard level MOSFET
Rev. 01 — 22 January 2010
Objective data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
Advanced TrenchMOS provides low
RDSon and low gate charge
High efficiency gains in switching
power converters
Improved mechanical and thermal
characteristics
LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
DC-to-DC converters
Lithium-ion battery protection
Load switching
Motor control
Server power supplies
1.4 Quick reference data
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Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
VGS = 10 V; Tj(init) = 25 °C;
ID = 45 A; Vsup ≤ 60 V;
RGS = 50 Ω; unclamped
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 30 A;
VDS = 30 V;
see Figure 13 and 14
Min Typ Max Unit
- - 60 V
- - 44 A
- - 74 W
-55 -
175 °C
- - 45 mJ
- 4.4 - nC
- 20 - nC
1 page  
NXP Semiconductors
PSMN017-60YS
N-channel LFPAK 60 V 17 mΩ standard level MOSFET
5. Characteristics
Table 5. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
VGSth
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
RG gate resistance
Dynamic characteristics
QG(tot)
total gate charge
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QGS gate-source charge
QGS(th)
QGS(th-pl)
QGD
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
VGS(pl)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
Conditions
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 9 and 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 125 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 15 A; Tj = 175 °C;
see Figure 11
VGS = 10 V; ID = 15 A; Tj = 100 °C;
see Figure 11
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 12
f = 1 MHz
ID = 30 A; VDS = 30 V; VGS = 10 V;
see Figure 13 and 14
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 30 A; VDS = 30 V; VGS = 10 V;
see Figure 13 and 14
ID = 30 A; VDS = 30 V; VGS = 10 V;
see Figure 13
ID = 30 A; VDS = 30 V; VGS = 10 V;
see Figure 13 and 14
VDS = 30 V; see Figure 13 and 14
VDS = 30 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 15
VDS = 30 V; RL = 1 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω
PSMN017-60YS_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 22 January 2010
Min Typ Max Unit
54 - - V
60 - - V
234V
- - 4.6 V
1- - V
-
0.03 2
µA
- - 50 µA
- 2 100 nA
- 2 100 nA
- 28 39 mΩ
- - 27 mΩ
-
12.3 17
mΩ
- 1- Ω
- 20 - nC
- 16.5 - nC
- 6.4 - nC
- 3.5 - nC
- 2.9 - nC
- 4.4 - nC
- 4.8 - V
- 1172 - pF
- 164 - pF
- 96 - pF
- 13 - ns
- 6.4 - ns
- 27 - ns
- 12.7 - ns
© NXP B.V. 2010. All rights reserved.
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5 Page 
NXP Semiconductors
PSMN017-60YS
N-channel LFPAK 60 V 17 mΩ standard level MOSFET
8. Revision history
Table 7. Revision history
Document ID
Release date
PSMN017-60YS_1
20100122
Data sheet status
Objective data sheet
Change notice
-
Supersedes
-
www.DataSheet4U.com
PSMN017-60YS_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 22 January 2010
© NXP B.V. 2010. All rights reserved.
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