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PDF STS2DPF80 Data sheet ( Hoja de datos )
| Número de pieza | STS2DPF80 | |
| Descripción | DUAL P-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
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STS2DPF80
DUAL P-CHANNEL 80V - 0.21 Ω - 2.3A SO-8
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STS2DPF80
80 V
<0.25 Ω
2.3 A
■ TYPICAL RDS(on) = 0.21 Ω
■ STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This application specific Power MOSFET is the
second generation of STMicroelectronis unique
"Single Feature Size™" strip-based process. The
resulting transistor shows extremely high packing
density for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing reproduc-
ibility.
APPLICATIONS
■ DC/DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
■ POWER MANAGEMENT IN CELLULAR
PHONES AND DISPLAY NEW GENERATION
SO-8
INTERNAL SCHEMATIC DIAGRAM
www.DataSheet4U.com
Ordering Information
SALES TYPE
STS8DPF80
MARKING
S8DPF80
PACKAGE
SO-8
PACKAGING
TAPE & REEL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
80 V
VDGR Drain-gate Voltage (RGS = 20 kΩ)
80 V
VGS Gate- source Voltage
± 20
V
ID
Drain Current (continuous) at TC = 25°C Single Operation
Drain Current (continuous) at TC = 100°C Single Operation
2.0
1.3
A
A
IDM(•) Drain Current (pulsed)
8A
Ptot Total Dissipation at TC = 25°C
2.5 W
Tstg Storage Temperature
-55 to 150
°C
Tj Max. Operating Junction Temperature
150 °C
(•) Pulse width limited by safe operating area.
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
June 2004
Rev.0.1
1/9
1 page  
Normalized Gate Threshold Voltage vs Temperature
STS2DPF80
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature.
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STS2DPF80.PDF ] | |
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