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PDF APT35GA90S Data sheet ( Hoja de datos )
| Número de pieza | APT35GA90S | |
| Descripción | High Speed PT IGBT | |
| Fabricantes | Microsemi Corporation | |
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APT35GA90B
APT35GA90S
900V
High Speed PT IGBT
POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved
through leading technology silicon design and lifetime control processes. A reduced Eoff -
VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low
gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
TO-247
APT35GA90S
D3PAK
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even APT35GA90B
when switching at high frequency.
Single die IGBT
FEATURES
• Fast switching with low EMI
• Very Low Eoff for maximum efficiency
• Ultra low Cres for improved noise immunity
• Low conduction loss
• Low gate charge
• Increased intrinsic gate resistance for low EMI
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• High power PFC boost
• Welding
• UPS, solar, and other inverters
• High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol Parameter
Vces Collector Emitter Voltage
IC1 Continuous Collector Current @ TC = 25°C
IC2 Continuous Collector Current @ TC = 100°C
ICM Pulsed Collector Current 1
VGE Gate-Emitter Voltage 2
www.DataShPeDet4U.coTmotal Power Dissipation @ TC = 25°C
SSOA Switching Safe Operating Area @ TJ = 150°C
TJ, TSTG Operating and Storage Junction Temperature Range
TJ Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
Ratings
900
63
35
105
±30
290
105A @ 900V
-55 to 150
300
Static Characteristics
Symbol Parameter
TJ = 25°C unless otherwise specified
Test Conditions
Min
VBR(CES)
VCE(on)
VGE(th)
ICES
IGES
Collector-Emitter Breakdown Voltage
Collector-Emitter On Voltage
Gate Emitter Threshold Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
VGE = 0V, IC = 1.0mA
VGE = 15V,
IC = 18A
TJ = 25°C
TJ = 125°C
VGE =VCE , IC = 1mA
VCE = 900V,
TJ = 25°C
VGE = 0V
TJ = 125°C
VGS = ±30V
900
3
Thermal and Mechanical Characteristics
Symbol
RθJC
WT
Torque
Characteristic
Junction to Case Thermal Resistance
Package Weight
Mounting Torque (TO-247 Package), 4-40 or M3 screw
Min
-
-
Typ
2.5
2.2
4.5
Typ
-
5.9
Max
3.1
6
250
1000
±100
Max
0.43
-
10
Unit
V
A
V
W
°C
Unit
V
μA
nA
Unit
°C/W
g
in·lbf
Microsemi Website - http://www.microsemi.com
1 page  
Typical Performance Curves
10,000
1,000
Cies
100
10
Coes
Cres
1
0
200 400
600 800
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
APT35GA90B_S
200
100
10
1
0.1 1
10 100 1000
VCE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
0.50
0.45
0.40
D = 0.9
0.35
0.30
0.7
0.25
0.20
0.5
Note:
0.15
0.3
t1
0.10
t2
0.05
0.1
Duty Factor D = t1/t2
0.05
SINGLE PULSE
Peak TJ = PDM x ZθJC + TC
0
10-5
10-4
10-3
10-2
0.1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APT35GA90S.PDF ] | |
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