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PDF HGTG12N60C3D Data sheet ( Hoja de datos )
| Número de pieza | HGTG12N60C3D | |
| Descripción | UFS Series N-Channel IGBT | |
| Fabricantes | Harris Corporation | |
| Logotipo |  |
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HGTG12N60C3DS E M I C O N D U C T O R
January 1997
24A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
Features
• 24A, 600V at TC = 25oC
• Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Package
JEDEC STYLE TO-247
E
C
G
Description
The HGTG12N60C3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOS-
FET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately
between 25oC and 150oC. The IGBT used is the development
type TA49123. The diode used in antiparallel with the IGBT is
the development type TA49061.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTG12N60C3D TO-247
G12N60C3D
NOTE: When ordering, use the entire part number.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
Formerly Developmental Type TA49117.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
www.DataSAhteTeCt4=U2.c5oomC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RGE = 25Ω.
HGTG12N60C3D
600
24
12
15
96
±20
±30
24A at 600V
104
0.83
-40 to 150
260
4
13
UNITS
V
A
A
A
A
V
V
W
W/oC
oC
oC
µs
µs
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
3-35
File Number 4043.1
1 page  
HGTG12N60C3D
Typical Performance Curves (Continued)
200
100
VGE = 10V
TJ = 150oC, TC = 75oC
RG = 25Ω, L = 100µH
VGE = 15V
10
fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 1.2oC/W
1
5 10
20
30
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
100 TJ = 150oC, VGE = 15V, RG = 25Ω, L = 100µH
80
60
LIMITED BY
CIRCUIT
40
20
0
0 100 200 300 400 500 600
VCE(PK), COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 14. SWITCHING SAFE OPERATING AREA
2500
2000
CIES
FREQUENCY = 1MHz
1500
1000
500
CRES
COES
0
0 5 10 15 20
www.DataSheet4U.com
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
IG REF = 1.276mA, RL = 50Ω, TC = 25oC
600 15
480
VCE = 600V
360
12
9
240
VCE = 400V
VCE = 200V
120
6
3
0
0 10 20 30 40 50
QG, GATE CHARGE (nC)
FIGUE 16. GATE CHARGE WAVEFORMS
0
60
100
0.5
0.2
0.1
10-1 0.05
0.02
t1
PD
t2
0.01
10-2
10-5
SINGLE PULSE
10-4
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
100
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
101
3-39
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HGTG12N60C3D.PDF ] | |
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