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PDF STL80N3LLH6 Data sheet ( Hoja de datos )
| Número de pieza | STL80N3LLH6 | |
| Descripción | Power MOSFETs | |
| Fabricantes | ST Microelectronics | |
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Features
STL80N3LLH6
N-channel 30 V, 0.0042 Ω, 21 A PowerFLAT™(5x6)
STripFET™ VI DeepGATE™ Power MOSFET
Preliminary data
Type
STL80N3LLH6
VDSS
30 V
RDS(on)
max
0.005 Ω
ID
21 A (1)
1. The value is rated according Rthj-pcb
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ High avalanche ruggedness
■ Low gate drive power losses
■ Very low switching gate charge
Application
■ Switching applications
Description
This product utilizes the 6th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure.The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
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PowerFLAT™ ( 5x6 )
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STL80N3LLH6
Marking
80N3LLH6
Package
PowerFLAT™ (5x6)
Packaging
Tape and reel
November 2009
Doc ID 16773 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/10
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1 page  
STL80N3LLH6
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 21 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 10.5 A,
di/dt = 100 A/µs,
VDD=25 V
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
- 21 A
- 84 A
- 1.1 V
24
- 16.8
1.4
ns
nC
A
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Doc ID 16773 Rev 1
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