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PDF KMBT3904 Data sheet ( Hoja de datos )
| Número de pieza | KMBT3904 | |
| Descripción | NPN Transistors | |
| Fabricantes | Guangdong Kexin Industrial | |
| Logotipo |  |
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SMD Type
NPN Transistors
KMBT3904(MMBT3904)
Transistors
Features
Epitaxial planar die construction
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics Ta = 25
Parameter
www.DataCSohleleect4toU-.bcaosme breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base - emitter saturation voltage
Delay time
Rise time
Storage time
Fall time
Transition frequency
Marking
Marking
1AM
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Rating
60
40
6
0.2
0.2
150
-55 to 150
Unit
V
V
V
A
W
1.Base
2.Emitter
3.collector
Symbol
Testconditons
VCBO Ic= 100 ìA IE=0
VCEO Ic= 1 mA IB=0
VEBO IE= 10 A IC=0
IcBO VCB= 60 V , IE=0
IcEO VCE= 30 V , VBE(off)=3V
IEBO VEB= 5V , IC=0
VCE= 1V, IC= 10mA
hFE
VCE= 1V, IC= 50mA
VCE(sat) IC=50 mA, IB= 5mA
VBE(sat) IC= 50 mA, IB= 5mA
td VCC=3.0V,VBE=-0.5V
tr IC=10mA,IB1=-IB2=1.0mA
ts VCC=3.0V,IC=10mA
tf IB1=-IB2=1.0mA
fT VCE= 20V, IC= 10mA,f=100MHz
Min Typ Max Unit
60 V
40 V
6V
0.1 A
50 nA
0.1 A
100 400
60
0.3 V
0.95 V
35
ns
35
200
ns
50
250 MHz
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| PDF Descargar | [ Datasheet KMBT3904.PDF ] | |
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