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PDF STD35N3LH5 Data sheet ( Hoja de datos )
| Número de pieza | STD35N3LH5 | |
| Descripción | Power MOSFETs | |
| Fabricantes | ST Microelectronics | |
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Features
STD35N3LH5
N-channel 30 V, 14 mΩ, 35 A, DPAK
STripFET™ V Power MOSFET
Preliminary data
Type
STD35N3LH5
VDSS
30 V
RDS(on)
max
< 16 mΩ
■ 100% avalanche tested
■ Surface mounting DPAK (TO-252)
■ RDS(on) * Qg industry benchmark
■ Low gate drive power losses
ID
35 A
Applications
■ Switching applications
– Automotive
Description
This STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
figure of merit (FOM).
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3
1
DPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STD35N3LH5
Marking
D35N3LH5
Package
DPAK
Packaging
Tape and reel
October 2009
Doc ID 16359 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/11
www.st.com
11
1 page  
STD35N3LH5
Electrical characteristics
Table 6. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on)
tr
Turn-on delay time
Rise time
VDD=20 V, ID= 15 A,
RG=4.7 Ω, VGS=10 V
Figure 5
td(off)
tf
Turn-off delay time
Fall time
VDD=20 V, ID= 15 A,
RG=4.7 Ω, VGS=10 V
Figure 5
Min. Typ. Max. Unit
TBD
-
TBD
-
ns
ns
TBD
-
TBD
-
ns
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 35 A, VGS=0
ISD= 35 A,
di/dt = 100 A/µs,
VDD= 20 V, Tj=150 °C
Figure 4
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
35 A
-
140 A
- 1.5 V
TBD
- TBD
TBD
ns
nC
A
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Doc ID 16359 Rev 1
5/11
5 Page 
STD35N3LH5
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Doc ID 16359 Rev 1
11/11
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