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PDF 2SK3595-01MR Data sheet ( Hoja de datos )
| Número de pieza | 2SK3595-01MR | |
| Descripción | N-CHANNEL SILICON POWER MOSFET | |
| Fabricantes | Fuji Electric | |
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2SK3595-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220F
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-repetitive Avalanche current
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
VDS
VDSX *5
ID
ID(puls]
VGS
IAS *2
EAS *1
dVDS/dt *4
dV/dt *3
PD Ta=25°C
Tc=25°C
200
170
±45
±180
±30
45
258.9
20
5
2.16
95
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
Equivalent circuit schematic
Drain(D)
Gate(G)
Operating and storage
temperature range
Isolation voltage
Tch
Tstg
VISO *6
+150
-55 to +150
2
°C
°C
Source(S)
*1 L=205µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch <=150°C
*3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS <= 200V *5 VGS=-30V *6 t=60sec f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
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Item
Symbol
Test Conditions
Drain-source breakdown voltaget
V(BR)DSS
ID= 250µA VGS=0V
Gate threshold voltage
VGS(th)
ID= 250µA VDS=VGS
Min. Typ.
200
3.0
Max. Units
V
5.0 V
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
IDSS
IGSS
RDS(on)
gfs
Ciss
VDS=200V VGS=0V
VDS=160V VGS=0V
VGS=±30V VDS=0V
ID=15A VGS=10V
ID=15A VDS=25V
VDS=75V
Tch=25°C
Tch=125°C
10
50
12.5 25
1960
25
250
100
66
2940
µA
nA
mΩ
S
pF
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Coss
Crss
td(on)
tr
VGS=0V
f=1MHz
VCC=48V ID=15A
VGS=10V
260 390
18 27
20 30
17 26
ns
Turn-off time toff
td(off)
tf
RGS=10 Ω
53 80
19 29
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
QG
QGS
QGD
IAV
VSD
trr
Qrr
VCC=100V
ID=30A
VGS=10V
L=205µH Tch=25°C
IF=30A VGS=0V Tch=25°C
IF=30A VGS=0V
-di/dt=100A/µs Tch=25°C
51 76.5 nC
15 22.5
16 24
45 A
1.10 1.65 V
0.19 µs
1.4 µC
Thermalcharacteristics
Item
Thermal resistance
www.fujielectric.co.jp/denshi/scd
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
1.316 °C/W
58.0 °C/W
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SK3595-01MR.PDF ] | |
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