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PDF MP4T6825 Data sheet ( Hoja de datos )
| Número de pieza | MP4T6825 | |
| Descripción | Low Noise High fT Silicon Transistor | |
| Fabricantes | M-pulse Microwave | |
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Low Current 8 Volt, Low Noise
High fT Silicon Transistor
MP4T6825 Series
Features
• Low Current Operation
• High fT (8 GHz)
• Low Noise Figure with 1-5 mA Current
• Low Phase Noise
• Inexpensive
• Available on Tape and Reel
Description
The MP4T6825 series of low current silicon bipolar
transistors provide low noise figure at a bias of 5-10 volts
and collector current of 1-5 mA. These inexpensive surface
mount transistors are useful for low noise amplifiers and
VCOs from VHF through 2.5 GHz.
The MP4T6825 series has high fT (8 GHz) and provides
approximately 1.5 dB noise figure with 1-3 mA current.
These transistors also have low phase noise when used in 5-
10 volt low current VCOs through 3 GHz.
The MP4T6825 series are inexpensive transistors designed
for RF systems that require low current drain. This family of
transistors is available in chip (MP4T682500), SOT-23
(MP4T682533), SOT-143 (MP4T682539), and in the Micro-
X (MP4T682535) packages. Surface mount packages are
available on tape and reel.
www.DataSheet4U.com
Absulote Maximum Ratings at 25°C
Parameter
Absolute Maximum
Collector-Base Voltage
20V
Collector-Emitter Voltage
12 V
Emitter-Base Voltage
1.5 V
Collector Current
Junction Temperature
Storage Temperature
25 mA
+200°C2
Chips or Ceramic Packages
Plastic Packages
Power Dissipation1
-65°C to +200°C
-65°C to +150°C
1. See power derating curves.
2. Die or ceramic packages -150°C for plastic pacakges.
SOT-23
SOT-143
Chip
Specification Subject to Change Without Notice
M M-Pulse Microwave__________________________________________________________________________________
1
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
1 page  
Low Current 8 Volt, Low Noise High fT Silicon Transistor
MP4T6825 Series
Typical Performance Curves (MP4T682535)
POWER DERATING CURVES
300
M P 4T 682 50 0 (C H IP ) O N IN F IN IT E H E A T S IN K
250
M P4T682535
(M IC R O -X )
200
150
100
M P4T682533, 39
50 (SO T -23 , 1 43 ) F R E E A IR
0
0
20 40 60 80 100 120 140 160 180 200
A M B IE N T T E M P E R A T U R E (C )
NOISE FIGURE and ASSOCIATED GAIN at
VCE = 8 V, 1 GHz vs COLLECTOR CURRENT
20
18
16 ASSO CIATED GAIN
14
12
10
8
6
4
2 NO ISE FIGURE
0
1 10 100
CO LLEC TO R C URR EN T (mA)
GAIN vs FREQUENCY at VCE=8 V and IC =
5 mA
25
20
GTU (M AX)
15
10
|S 21 E|2
5
0
1 10
FR EQ U EN C Y (G H z)
COLLECTOR-BASE CAPACITANCE (COB)
vs COLLECTOR-BASE VOLTAGE
0 .3 5
0.3
0 .2 5
0.2
0 .1 5
0.1
0 .0 5
0
1 10
C O L L EC T O R -B ASE V O L TA GE (V o lts)
100
GAIN BANDWIDTH PRODUCT (fT) vs
COLLECTOR CURRENT at VCE=8 V
10
9
8
7
6
5
4
www.DataSh3 eet4U.com
2
1
0
1 10
CO LLECTO R CURRENT (mA)
100
GAIN vs COLLECTOR CURRENT at 1
GHz, VCE=8 V
22
20
18
16 MAG
GTU (M AX )
14
1 2 |S2 1 E|2
10
8
6
1 10
COLLECTOR CURRENT (mA)
100
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
5
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MP4T6825.PDF ] | |
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