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PDF MP4T645 Data sheet ( Hoja de datos )
| Número de pieza | MP4T645 | |
| Descripción | Silicon Bipolar High fT Low Noise Microwave Transistors | |
| Fabricantes | M-pulse Microwave | |
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Silicon Bipolar High fT Low Noise
Microwave Transistors
Features
•fT to 9 GHz
•Low Noise Figure
•High Associated Gain
•Hermetic and Surface Mount Packages Av ailable
•Can be Screened to JANTX, JANTXV Equiv alent Lev els
•Industry Standard
Case Styles
Description
The MP4T645 family of high gain-bandwidth, small
signal silicon bipolar transistors is well suited for use in
amplifiers to approximately 4 GHz, and in oscillators to
approximately 10 GHz. These industry standard transis-
tors freature low noise figure at high collector current,
which produces v ery good associated gain and wide
dynamic range. The MP4T645 series transistors are
av ailable in a hermetic microstrip package
(MP4T64535), in the plastic SOT-23 package
(MP4T64533), in chip form (MP4T64500), and in the
SOT-143 package (MP4T64539). The MP4T645 series
is av ailable in other plastic and hermetic packages as
well. The chip and hermetically packaged transistors
can be screened to a JANTXV equiv alent lev el.
www.DataSheet4U.com
Applications
The MP4T645 family of bipolar NPN transistors can be
used for low noise, high associated gain. large dynamic
range amplifiers up to approximately 4 GHz. These
transistors can also be used as preamplifier or driv er
stages in the same frequency range.
The MP4T645 family of bipolar NPN transistors can also
be used for oscillators or VCOs up to approximately 10
GHz. The passiv ation consists of silicon dioxide,
commonly known as thermal oxide, and silicon nitride to
produce v ery low 1/f noise in both amplifiers and
oscillators.
SOT-23
MP4T645
SOT-143
Chip
Micro-X
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
1
1 page  
Silicon Bipolar High fT Low Noise Microwave Transistors
MP4T645 Series
Typical Performance Curves
MP4T645 Series
NOMINAL POWER DERATING CURVES
500
450 MP4T64500 Chip on
400 Infinite Heat Sink
350
300
250
200
150
100
50
0
0
MP4T64533 in
SOT-23 Package
25 50
MP4T64535 in
Micro-X Package
75 100 125 150
AMBIENT TEMP (C)
175
NOMINAL COLLECTOR-BASE CAPACITANCE vs
COLLECTOR-BASE VOLTAGE (MP4T64535)
0.6
0.55
0.5
0.45
0.4
0.35
0.3
0.25
0.2
1
10
COLLECTOR-BASE VOLTAGE
(VCB) (Volts)
100
NOMINAL GAIN vs FREQUENCY at
VCE = 8 VOLTS, IC = 10 mA (MP4T64535)
24
20
16
GTU (MAX)
12
8
|S21E|2
4
0
www.DataSh1eet4U.com
25
FREQUENCY (GHz)
10
NOMINAL GAIN vs COLLECTOR CURRENT at
f = 1.5 GHz, VCE = 8 Volts (MP4T64535)
15
14
13
12
11 MAG
10
GTU (MAX)
9
8
7 |S21E|2
6
1
10
100
COLLECTOR CURRENT (mA)
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MP4T645.PDF ] | |
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