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Número de pieza | MP4T6325 | |
Descripción | General Purpose Low Noise High fT Silicon Transistor | |
Fabricantes | M-pulse Microwave | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MP4T6325 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! Low OperatingVoltage, High fT
Bipolar Microwave Transistors
Features
•Designed for Battery Operation
•fT to 10 GHz
•Low Voltage Oscillator and Amplifier
•Low Phase Noise and Noise Figure
•Hermetic and Surface Mount Packages and
Chips Av ailable
•Can be Screened to JANTX, JANTXV Equiv alent Lev els
Case Styles
Description
The MP4T6365 family of low v oltage, high gain band-
width silicon NPN bipolar transistors prov ides low noise
figure and high gain at low bias v oltages. These transis-
tors are especially attractiv e for low operating v oltage
low noise amplifiers or driv er amplifiers at frequencies
to 4 GHz. They are also useful for low phase noise local
oscillators and VCOs in battery operated equipment to
10 GHz.
The MP4T6365 family was designed to hav e low noise
figure at operating v oltages as low as 3 v olts. These
transistors also exhibit low phase noise in VCOs
operating at 5 v olts or less.
Because this transistor family was specifically designed
to perate from low bias v oltage, it has superior phase
noise in comparison to similar current bipolar transistors
wwwwi.tDhahtaiSghheeert4cUo.clolemctor breakdown v oltage when operating
under the same low v oltage conditions.
The MP4T6365 series transistors are av ailable in
hermetic Micro-X packages, the SOT-23, the SOT-143,
and in chip form (MP4T636500). Other stripline and
hermetic packages are av ailable. The chip and
hermetic packages can be screened to JANTX, JANTXV
equiv alent lev els. The plastic parts can be supplied on
tape and reel.
All of M-Pulse’s silicon bipolar transistor families use
silicon dioxide and silicon nitride passiv ation to assure
low 1/F noise for amplifier and oscillator applications.
SOT-23
MP4T6365
V2.00
SOT-143
Chip
Micro-X
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
1
1 page Low Operating Voltage, High fT Bipolar Microwave Transistors
MP4T6365
Typical Performance Curves
MP4T6365 Series
V2.00
POWER DERATING CURVES
500
450 MP4T636500 Chip on
400 Infinite Heat Sink
350
300
250 MP4T636535 in
200 Micro-X Package
150
100 MP4T636533 in
SOT-23 Package
50
0
0 25 50 75 100 125 150
AMBIENT TEMP (7C)
175
NOMINAL COLLECTOR-BASE CAPACITANCE (COB)
vs COLLECTOR-BASE VOLTAGE (MP4T636535)
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0
5 10
COLLECTOR-BASE VOLTAGE
(Volts)
15
NOMINAL GAIN vs FREQUENCY at
VCE = 3 Volts, IC = 10 mA (MP4T636535)
24
20
16
GTU (MAX)
12
8
|S21E|2
4
www.DataS0 heet4U.com
1
25
FREQUENCY (GHz)
10
NOMINAL GAIN vs COLLECTOR CURRENT at
f = 1.0 GHz, VCE = 3 Volts (MP4T636535)
20
19
18
MAG
17
16
15 GTU (MAX)
14
13
|S21E|2
12
11
1
10 100
COLLECTOR CURRENT (mA)
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet MP4T6325.PDF ] |
Número de pieza | Descripción | Fabricantes |
MP4T6325 | General Purpose Low Noise High fT Silicon Transistor | M-pulse Microwave |
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