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PDF AMIS-720233-B Data sheet ( Hoja de datos )

Número de pieza AMIS-720233-B
Descripción Image Sensor
Fabricantes AMI SEMICONDUCTOR 
Logotipo AMI SEMICONDUCTOR Logotipo



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AMIS-720233-B: Contact Image Sensor
Data Sheet
1.0 General Description
The AMIS-720233-B (PI3033B) contact image sensor (CIS) chip is a 200 dot per inch (dpi) resolution, linear array image sensor chip.
The sensor chip is processed with AMI Semiconductor’s proprietary CMOS image sensing technology. Designed for cascading multiple
chips in a series, the image sensor chips, using chip-on-board process, are bonded end-to-end on a printed circuit board (PCB) in
varying sensing array lengths. This CIS chip offers image reading widths to suit document scanners found in facsimile, scanner, check
reader and office automation equipment.
Figure 1 is a block diagram of the imaging sensor chip. Each sensor chip consists of 64 detector elements, their associated multiplexing
switches, buffers and a chip selector. The detector's element-to-element spacing is approximately 125um. The size of each chip without
scribe lines is 7950um by 500um. Each sensor chip has eight bonding pads. Only seven are used to make the CIS modules. The pad
symbols and functions are described in Table 1.
Buffer
SP
7950 m
Row of 64 Sensors
and Video Signal
Multiplexers
Readout Shift Register
500 m
Buffer
CP VDD DGND
Chip
Select
IOUT RSTLEV
Buffer
AGND EOS
Figure 1: AMIS-720233-B Block Diagram
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Table 1: Pad Symbols and Functions
Symbol
Function
SP Start pulse: input to start the line scan
CP Clock pulse: input to clock the shift register
VDD
Positive supply: +5V supply connected to substrate
DGND
Digital ground: connection topside common
RSTLEV
A bias pad: not used, left floating
IOUT
Signal current output: output for video signal current
AGND
Analog ground: connection topside common
EOS
End-of-scan pulse: output from the shift register at end-of-scan
AMI Semiconductor –May 06, M-20567-001
www.amis.com
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AMIS-720233-B pdf
AMIS-720233-B: Contact Image Sensor
Data Sheet
5.0 Output Circuit of the Image Sensor
The video signal from each photo-site is connected to a common video line on the sensor. Each photo-site is composed of a
phototransistor with a series MOS switch connecting its emitter to a common video line. The video line is connected to the pad labeled
IOUT. The photo-sensing element is the base of the phototransistor where it detects and converts the light energy to proportional
charges and stores it in its base capacitance. When the MOS switch is activated, the emitter is connected to the video line and acts as
source follower, producing an impulse current proportional to the stored charges in the base. This current is a discrete-time analog
signal output called the video pixel. Accordingly, the video pixel is proportional to the light energy impinging in the neighborhood of its
photo-sites. Figure 4, shows the output structure of four photo-sites out of 64. The multiplexing MOS switch in each photo-site
terminates into the output pad, IOUT, through a common video line. The shift register sequentially accesses each photo-site by a
activating the MOS switch. As they are accessed, a sequence of video pixels is sent to the IOUT where they are processed with an
external signal conversion circuit.
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5.1 Signal Conversion Circuit
Figure 4: Video Pixel Output Structures
Figure 5: Video Output Test and Application Circuit
AMI Semiconductor –May 06, M-20567-001
www.amis.com
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AMIS-720233-B arduino
AMIS-720233-B: Contact Image Sensor
Data Sheet
www.DataSheet4U.com
AMI Semiconductor –May 06, M-20567-001
www.amis.com
Figure 9: Typical A6 CIS Module Circuit
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