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PDF PH4530L Data sheet ( Hoja de datos )
| Número de pieza | PH4530L | |
| Descripción | N-channel TrenchMOS logic level FET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PH4530L
N-channel TrenchMOS™ logic level FET
Rev. 02 — 26 January 2005
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode field effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s Low thermal resistance
s Logic level gate drive
s SO8 equivalent area footprint
s Low on-state resistance.
1.3 Applications
s DC-to-DC converters
s Portable appliances
s Switched-mode power supplies
s Notebook computers.
1.4 Quick reference data
s VDS ≤ 30 V
s Ptot ≤ 62.5 W
s ID ≤ 80 A
s RDSon ≤ 5.7 mΩ.
2. Pinning information
Table 1: Discrete pinning
www.DPaitnaSheet4DUe.scocmription
1,2,3 source
4 gate
mb mounting base;
connected to drain
Simplified outline
mb
Symbol
D
G
mbb076 S
1234
Top view
SOT669 (LFPAK)
1 page  
Philips Semiconductors
PH4530L
N-channel TrenchMOS™ logic level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
IDSS
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VGS = 0 V
ID = 1 mA; VDS = VGS; Figure 9
VDS = 30 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±15 V; VDS = 0 V
VGS = 10 V; ID = 15 A; Figure 7 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 5 V; ID = 15 A; Figure 7 and 8
Qg(tot)
total gate charge
Qgs gate-source charge
Qgd gate-drain (Miller) charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
www.DtfataSheet4Ufa.cllotmime
Source-drain diode
ID = 25 A; VDS = 10 V; VGS = 5 V;
Figure 13
VGS = 0 V; VDS = 10 V; f = 1 MHz;
Figure 11
VDS = 10 V; ID = 25 A;
VGS = 5 V; RG = 4.7 Ω
VSD source-drain (diode forward) voltage IS = 15 A; VGS = 0 V; Figure 12
trr reverse recovery time
IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V
Min Typ Max Unit
30 -
-
1 1.5 2
V
V
-
0.06 1
µA
- - 500 µA
- 2 100 nA
- 4.8 5.7 mΩ
- 8.2 9.7 mΩ
- 5.8 7.2 mΩ
- 23.5 - nC
- 5.8 - nC
- 6.5 - nC
- 1972 - pF
- 769 - pF
- 304 - pF
- 22 - ns
- 40 - ns
- 48 - ns
- 18 - ns
- 0.85 1.2 V
- 38 - ns
9397 750 14031
Product data sheet
Rev. 02 — 26 January 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
5 of 12
5 Page 
Philips Semiconductors
PH4530L
N-channel TrenchMOS™ logic level FET
9. Data sheet status
Level Data sheet status [1] Product status [2] [3]
I Objective data
Development
II Preliminary data
Qualification
III Product data
Production
Definition
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
11. Disclaimers
www.DataSheet4U.com
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
12. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 14031
Product data sheet
Rev. 02 — 26 January 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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