|
|
PDF AGR19045EF Data sheet ( Hoja de datos )
| Número de pieza | AGR19045EF | |
| Descripción | Transistor | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AGR19045EF (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
AGR19045EF
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19045EF is a 45 W, 28 V N-channel later-
ally diffused metal oxide semiconductor (LDMOS)
RF power field effect transistor (FET) suitable for
personal communication service (PCS) (1930 MHz—
1990 MHz), global system for mobile communication
(GSM/EDGE), time-division multiple access (TDMA),
and single-carrier or multicarrier class AB power
amplifier applications.
Figure 1. AGR19045EF (flanged) Package
Typical two carrier N-CDMA performance: VDD =
28 V, IDQ = 550 mA, f1 = 1958.75 MHz, f2 =
1961.25 MHz, IS-95 CDMA (pilot, sync, paging,
traffic codes 8—13). Peak/average (P/A) = 9.72 dB
at 0.01% probability on CCDF. 1.2288 MHz trans-
mission bandwidth (BW). Adjacent channel power
ratio (ACPR) measured over 30 kHz BW at f1 –
885 kHz and f2 + 885 kHz. Third-order intermodu-
lation distortion (IM3) measured over a
www.DataShe1e.2t42U8.c8omMHz BW at f1 – 2.5 MHz and f2 + 2.5 MHz:
— Output power (POUT): 9.5 W.
— Power gain: 15 dB.
— Efficiency: 24.8%.
— IM3: –34.5 dBc.
— ACPR: –49.5 dBc.
EDGE Features
Typical EDGE performance,
1990 MHz, 26 V, IDQ = 400 mA:
— Output power (POUT): 18 W typical.
— Power gain: 14.5 dB.
— Efficiency: 35% typical.
— Spectral regrowth:
@ ±400 kHz = –62 dBc.
@ ±600 kHz = –74 dBc.
— Error vector magnitude (EVM) = 2.0%.
GSM Features
Typical performance over entire GSM band:
— P1dB: 50 W typical.
— Power gain @ P1dB = 14.0 dB continuous wave
(CW).
— Efficiency @ P1dB = 54% typical CW.
— Return loss: –10 dB.
Device Performance Features
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1930 MHz, 45 W CW out-
put power.
Large signal impedance parameters available.
ESD Rating*
AGR19045EF
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
tdaukreinngtoalal hvoainddelinxpgo, asussreemtobElyS, Danadntdesetleocpterircaatlioonvse.rPAstEgreeAsrKes D(EeOvSic)es
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
1 page  
AGR19045EF
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics
Z0 = 10 Ω
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
0.2
0.1
0.2
0.3
ZL
f3 f1
0.4
0.6
0.8
Z0.4 S
f3 f1
10
20
50
MHz (f)
ZS Ω
ZL Ω
(Complex Source Impedance) (Complex Optimum Load Impedance)
1930 (f1)
2.79 – j8.63
4.94 – j6.00
1960 (f2)
2.64 – j8.20
4.82 – j5.91
www.DataSheet4U.com
1990 (f3)
2.38 – j7.78
4.47 – j5.79
Note: ZL was chosen based on trade-offs between gain, output power, drain efficiency, and intermodulation distortion.
GATE (2)
DRAIN (1)
ZS ZL
SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AGR19045EF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AGR19045EF | Transistor | TriQuint Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |