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PDF AGR09090EF Data sheet ( Hoja de datos )
| Número de pieza | AGR09090EF | |
| Descripción | Lateral MOSFET | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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AGR09090EF
90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09090EF is a high-voltage, gold-metalized, lat-
erally diffused metal oxide semiconductor (LDMOS) RF
power transistor suitable for global system for mobile com-
munication (GSM), enhanced data for global evolution
(EDGE), cellular, and multicarrier class AB power amplifier
applications. This device is manufactured on an advanced
LDMOS technology, offering state-of-the-art performance
and reliability. Packaged in an industry-standard package
and capable of delivering a minimum output power of 90 W,
it is ideally suited for today's wireless base station RF
power amplifier applications.
Figure 1. AGR09090EF (Flanged) Package
GSM Features
Typical performance ratings for GSM EDGE
(f = 941 MHz, POUT = 40 W):
— Modulation spectrum:
@ ±400 kHz = –60 dBc.
@ ±600 kHz = –72 dBc.
— Error vector magnitude (EVM) = 2.3%.
www.DataSheTeytp4iUca.clopmerformance over entire GSM band:
— P1dB: 105 W typical.
— Power gain: @ P1dB = 17.8 dB.
— Efficiency @ P1dB = 60% typical.
— Return loss: –10 dB.
Cellular Features
Typical performance ratings (f = 880 MHz,
POUT = 40 W):
— Modulation spectrum:
@ ±400 kHz = –60 dBc.
@ ±600 kHz = –72 dBc.
— Error vector magnitude (EVM) = 2.3%.
Typical performance over entire GSM band:
— P1dB: 105 W typical.
— Power gain: @ P1dB = 17.6 dB.
— Efficiency @ P1dB = 60% typical.
— Return loss: –10 dB.
GSM/Cellular Features
High-reliability, gold-metalization process.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
90 W minimum output power.
Table 1. Thermal Characteristics
(921 MHz—960 MHz, and 865 MHz—895 MHz)
Parameter
Thermal Resistance,
Junction to Case:
AGR09090EF
Sym Value Unit
R JC
0.80 °C/W
Table 2. Absolute Maximum Ratings*
(921 MHz—960 MHz, and 865 MHz—895 MHz)
Parameter
Drain-source Voltage
Gate-source Voltage
Drain Current—Continuous
Total Dissipation at TC = 25 °C:
AGR09090EF
Derate Above 25 C:
AGR09090EF
Operating Junction
Temperature
Storage Temperature Range
Sym
VDSS
VGS
ID
Value
65
–0.5, +15
8.5
PD 219
— 1.25
TJ 200
TSTG –65, +150
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
(921 MHz—960 MHz, and 865 MHz—895 MHz)
AGR09090EF
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
tdaukreinngtoalal hvoainddelinxpgo, sausrseemtobElyS, Danadntdesetleocpterircaatlioonvse.rPAstEgreeAsrKes D(EeOvSic)es
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
1 page  
AGR09090EF
90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR09090EF, 865 MHz—895 MHz
Z17
C16 C17 C18 C19 C20
VDD
VGG R2 FB1
C10 C22
C9 C8 C7 C6
Z15 Z16 Z18 Z19 Z20 Z21 C15 Z22
Z6 C13 C21
C14
RF OUTPUT
R1
Z14 Z13
Z12 Z11
C12 C11
21
DUT
RF
Z1 C1 Z2 Z3 Z4 Z5 Z7 Z8
Z9
Z10 3
INPUT
C2 C3 C4 C5
PINS:
1. DRAIN
2. GATE
3. SOURCE
A. Schematic, 865 MHz—895 MHz
www.DataSheet4U.com
Parts List:
Microstrip line: Z1 0.193 in. x 0.066 in.; Z2 0.321 in. x 0.066 in.; Z3 0.179 in. x 0.100 in.; Z4 0.050 in. x 0.100 in.; Z5 0.425 in. x 0.100 in.;
Z6 0.958 in. x 0.050 in.; Z7 0.629 in. x 0.532 in.; Z8 0.050 in. x 0.532 in.; Z9 0.100 in. x 0.532 in.; Z10 0.050 in. x 0.532 in.;
Z11 0.412 in. x 0.532 in.; Z12 0.050 in. x 0.532 in.; Z13 0.122 in. x 0.532 in.; Z15 0.050 in. x 0.532 in.; Z16 0.173 in. x 0.532 in.;
Z17 1.916 in. x 0.050 in.; Z18 0.656 in. x 0.100 in.; Z19 0.050 in. x 0.100 in.; Z20 0.114 in. x 0.100 in.; Z21 0.208 in. x 0.066 in.;
Z22 0.208 in. x 0.066 in.
ATC® chip capacitor: C1, C6, C15, C16: 47 pF 100B470JW500X; C2, 2.7 pF 100B2R7JW500X; C3, C17, 10 pF 100B100JW500X;
C4, C5, C11, C12: 12 pF 100B120JW500X; C7, 22 pF 100B220JW500X; C13, C21: 1 pF 100B1R0BW500X; C14, 4.7 pF 100B4R7JW500X.
Sprague® tantalum surface-mount chip capacitor: C10, C20 10 µF, 35 V; C22 22 µF, 35 V.
Kemet® 1206 size chip capacitor: C9, C19: 0.1 µF C1206104K5RAC7800.
Murata® 0805 size chip capacitor: C8, C18: 0.01 µF GRM40X7R103K100AL.
1206 size chip resistor: R1 51 RM73B2B510, R2 1 k RM73B2B130.
Kreger® ferrite bead: FB1 2743D19447.
Taconic® ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5.
B. Component Layout, 865 MHz—895 MHz
Figure 3. AGR09090EF Test Circuit, 865 MHz—895 MHz
5 Page 
AGR09090EF
90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
19.0
18.5
IDQ = 900 mA
IDQ = 1000 mA
TYPICAL DATA
18.0
17.5
17.0
16.5
IDQ = 800 mA
IDQ = 700 mA
IDQ = 600 mA
16.0
0
5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125
Test Conditions:
VDD = 26 V, FREQUENCY = 880 MHz.
POUT (W)Z
Figure 12. Power Gain vs. POUT, 865 MHz—895 MHz
TYPICAL DATA
-30 3.5
-40
www.DataSheet4U.com
-50
-60
+/- 400 kHz
3.0
2.5
2.0
-70 1.5
-80
+/- 600 kHz
1.0
-90
EVM
0.5
-100
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46
POUT (dBm)
Test Conditions:
VDD = 26 V, FREQUENCY = 880 MHz, IDQ = 700 mA.
RES BW: 30 kHz, VIDEO BW: 300 Hz, EDGE FORMAT = 3GPP GSM 05.05.
Figure 13. Modulation Spectrum and EVM vs. POUT, 865 MHz—895 MHz
0.0
47
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