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PDF AS58LC1001 Data sheet ( Hoja de datos )
| Número de pieza | AS58LC1001 | |
| Descripción | 128K x 8 EEPROM Radiation Tolerant | |
| Fabricantes | Austin Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AS58LC1001 (archivo pdf) en la parte inferior de esta página. Total 21 Páginas | ||
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Austin Semiconductor, Inc.
EEPROM
AS58LC1001
128K x 8 EEPROM
Radiation Tolerant
PIN ASSIGNMENT
(Top View)
AVAILABLE AS MILITARY
SPECIFICATIONS
z Austin Semiconductor Space Level
z Austin Semiconductor Class ‘B’
FEATURES
z High speed: 250ns and 300ns
z Data Retention: 10 Years
z Low power dissipation, active current (20mW/MHz (TYP)),
standby current (100μW(MAX))
z Single +3.3V +.3V power supply
z Data Polling and Ready/Busy Signals
z Erase/Write Endurance (10,000 cycles in a page mode)
z Software Data protection Algorithm
z Data Protection Circuitry during power on/off
z Hardware Data Protection with RES pin
z Automatic Programming:
Automatic Page Write: 15ms (MAX)
128 Byte page size
OPTIONS
MARKINGS
z Timing
250ns access
-25
300ns access
-30
z Packages
Ceramic Flat Pack
F No. 306
Radiation Shielded Ceramic FP* SF No. 305
Ceramic SOJ
DCJ No. 508
Plastic SOP
DG
z Operating Temperature Ranges
-Military (-55oC to +125oC)
XT
-Industrial (-40oC to +85oC)
IT
*NOTE: Package lid is connected to ground (Vss).
32-Pin CFP (F & SF), 32-Pin CSOJ (DCJ),
32-Pin SOP (DG)
RDY/BUSY\ 1
A16 2
A14 3
A12 4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O 0 1 3
I/O 1 1 4
I/O 2 1 5
Vss 1 6
3 2 Vcc
31 A15
3 0 RES\
29 WE\
28 A13
27 A8
26 A9
25 A11
24 OE\
23 A10
2 2 CE\
2 1 I/O 7
2 0 I/O 6
1 9 I/O 5
1 8 I/O 4
1 7 I/O 3
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS58LC1001 is a 1 Megabit CMOS
Electrically Erasable Programmable Read Only Memory (EEPROM)
organized as 131, 072 x 8 bits. The AS58LC1001 is capable or in
system electrical Byte and Page reprogrammability.
The AS58LC1001 achieves high speed access, low power
consumption, and a high level of reliability by employing advanced
MNOS memory technology and CMOS process and circuitry
technology and CMOS process and circuitry technology.
This device has a 128-Byte Page Programming function to make its
erase and write operations faster. The AS58LC1001 features Data
Polling and a Ready/Busy signal to indicate completion of erase and
programming operations.
This EEPROM provides several levels of data protection.
Hardware data protection is provided with the RES pin, in addition to
noise protection on the WE signal and write inhibit during power on
and off. Software data protection is implemented using JEDEC
Optional Standard algorithm.
The AS58LC1001 is designed for high reliability in the most
demanding applications. Data retention is specified for 10 years and
erase/write endurance is guaranteed to a minimum of 10,000 cycles in
the Page Mode.
www.DataSheet4U.com
AS58LC1001
Rev. 1.0 12/08
For more products and information
please visit our web site at
www.austinsemiconductor.com
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
1 page  
Austin Semiconductor, Inc.
EEPROM
AS58LC1001
ABSOLUTE MAXIMUM RATINGS*
Voltage on Vcc Supply Relative to Vss................-0.5V to +7.0V1
Voltage on any pin Relative to Vss.......................-0.6V to +7.0V1
Storage Temperature ............................................-65°C to +150°C
Operating Temperature Range.............................-55oC to +125oC
Soldering Temperature Range...............................................260oC
Maximum Junction Temperature**....................................+150°C
Power Dissipation...................................................................1.0W
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability.
** Junction temperature depends upon package type, cycle
time, loading, ambient temperature and airflow.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TA < 125oC; Vcc = 3.3V +.3V)
PARAMETER
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage3
Input Voltage (RES\ Pin)
Input Leakage Current4
Output Leakage Current
Output High Voltage
Output Low Voltage
CONDITION
OV < VIN < Vcc
Output(s) disabled, OV < VOUT < Vcc
IOH = -400 PA
IOL = 2.1 mA
SYMBOL
VIH
VIL
VH
ILI
ILO
VOH
VOL
MIN
2.2
-0.3
Vcc-0.5
-2
-2
2.4
MAX
VCC + 0.3V
0.8
VCC +1.0
2
2
0.5
UNITS
V
V
V
P$
P$
V
V
NOTES
9
2
4
PARAMETER
CONDITIONS
Power Supply Current:
Operating
IOUT=OmA, Vcc = 3.6V
Cycle=1PS, Duty=100%
IOUT=OmA, Vcc = 3.6V
Cycle=MIN, Duty=100%
Power Supply Current:
Standby
CE\=Vcc, Vcc = 3.6V
CE\=VIH, Vcc = 3.6V
MAX
SYM -25 -30 -35 UNITS NOTES
888
ICC3
mA
20 20 20
ICC1 100 100 100 PA
ICC2 1.5 1.5 1.5 mA
CAPACITANCE
PARAMETER
Input Capacitance
Output Capactiance
www.DataSheet4U.com
AS58LC1001
Rev. 1.0 12/08
CONDITIONS
TA = 25oC, f = 1MHz
VIN = 0
SYMBOL
CIN
Co
MAX
6
12
UNITS
pF
pF
NOTES
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
5 Page 
Austin Semiconductor, Inc.
EEPROM
AS58LC1001
PAGE WRITE TIMING WAVEFORM
(WE\ CONTROLLED)
A7 - A16
A0 - A6
WE\
CE\
OE\
tAS tAH
tWP tDL
tCS 11111112222112222233333t3333CH444111114222221111333332222 11111222211211tB233333222LC3333444411111111122222222233333
tOES
tDH
tDS
1111122222111122223333444411111222221111333332222
tBL
tOEH
DIN
RDY/Busy\ High-Z
tDB
tRP
RES\
VCC
tRES
tWC
In transition from HI to LOW or LOW to HI.
tDW
High-Z
www.DataSheet4U.com
AS58LC1001
Rev. 1.0 12/08
11
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet AS58LC1001.PDF ] | |
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