|
|
PDF Si8435DB Data sheet ( Hoja de datos )
| Número de pieza | Si8435DB | |
| Descripción | P-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay Intertechnology | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de Si8435DB (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
P-Channel 1.5-V (G-S) MOSFET
Si8435DB
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.041 at VGS = - 4.5 V
0.048 at VGS = - 2.5 V
- 20
0.058 at VGS = - 1.8 V
0.075 at VGS = - 1.5 V
ID (A)a
- 10.0
- 9.32
- 8.48
- 7.45
Qg (Typ.)
22 nC
FEATURES
• TrenchFET® Power MOSFET
• Ultra Small MICRO FOOT® Chipscale
Packaging Reduces Footprint Area, Profile
RoHS
COMPLIANT
(0.62 mm) and On-Resistance Per Footprint Area
APPLICATIONS
• Low Threshold Load Switch for Portable Devices
- Low Power Consumption
- Increased Battery Life
MICRO FOOT
Bump Side View
Backside View
3
D
2
D
8435
XXX
S
4
G
1
S
G
Device Marking: 8435
xxx = Date/Lot Traceability Code
Ordering Information: Si8435DB-T1-E1 (Lead (Pb)-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS - 20
Gate-Source Voltage
VGS
±5
TC = 25 °C
- 10.0
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
- 8.06
- 6.72b,c
TA = 70 °C
- 5.37b,c
Pulsed Drain Current
IDM - 15
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
- 5.21
- 2.31b,c
TC = 25 °C
6.25
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
4.0
2.78b,c
TA = 70 °C
1.78b,c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Package Reflow Conditionsd
IR/Convection
260
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1” x 1” FR4 board.
c. t = 10 s.
www.Dadta.SRheefert4toU.IcPoCm/JEDEC (J-STD-020C), no manual or hand soldering.
e. In this document, any reference to the Case represents the body of the MICRO FOOT device and Foot is the bump.
Unit
V
A
W
°C
Document Number: 73559
S-82119-Rev. D, 08-Sep-08
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
0.7 12
0.6
0.5
8
0.4
0.3
4
0.2
0.1
0.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0
80 8
Si8435DB
Vishay Siliconix
25 50 75 100 125
TC - Case Temperature (°C)
Current Derating**
150
60 6
40 4
20 2
0
0.001
0.01
0.1
1
Time (s)
Single Pulse Power, Juncion-to-Ambient
10
100
Limited by RDSon*
10
1
0.1
IDM Limited
P (t) = 10 ms
P (t) = 100 ms
P (t) = 1 s
P (t) = 10 s
DC
0.01
TA = 25 °C
Single Pulse
0.001
0.1
BVDSS Limited
1 10
100
www.DataSheet4U.com
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73559
S-82119-Rev. D, 08-Sep-08
0
0 25 50 75 100 125 150
Case Temperature (°C)
Power Derating
** The power dissipation PD is based on TJ(max) = 150 °C, using
junction-to-foot thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet Si8435DB.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| Si8435DB | P-Channel 20-V (D-S) MOSFET | Vishay Intertechnology |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |